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IRF6156 Datasheet

  • IRF6156

  • FlipFET Power MOSFET

  • 248.88KB

  • 13頁

  • IRF

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PD - 94592A
IRF6156
Ultra Low
R
SS(on)
per Footprint Area
l
Low
Thermal Resistance
l
Bi-Directional N-Channel Switch
l
Super Low Profile (<.8mm)
l
Available Tested on Tape & Reel
l
ESD Protection Diode
聠
Description
l
FlipFET錚?Power MOSFET
V
SS
20V
:
60m
:
@V
GS1,2
= 2.5V
40m @V
GS1,2
= 4.5V
R
SS(on)
max
I
S
鹵6.5
鹵5.2
True chip-scale packaging is available from International Recti-
fier. Through the use of advanced processing techniques and a
unique packaging concept, extremely low on-resistance and the
highest power densities in the industry have been made available
for battery and load management applications. These benefits,
combined with the ruggedized device design that International
Rectifier is well known for,
provide the designer with an
extremely efficient and reliable device.
The
FlipFET聶
package, is one-fifth the footprint of a comparable
TSSOP-8 package and has a profile of less than .8mm. Com-
bined with the low thermal resistance of the die level device, this
makes the
FlipFET聶
the best device for applications where
printed circuit board space is at a premium and in extremely thin
application environments such as battery packs, mobile phones
and PCMCIA cards.
Absolute Maximum Ratings
Parameter
V
SS
I
S
@ T
A
= 25擄C
I
S
@ T
A
= 70擄C
I
SM
P
D
@T
A
= 25擄C
P
D
@T
A
= 70擄C
V
GS
T
J
T
STG
Source-to-Source Voltage
Continuous Current, V
GS1
= V
GS2
= 4.5V
Continuous Current, V
GS1
= V
GS2
Pulsed Current
Max.
Units
V
A
W
e
Power Dissipation
e
Power Dissipation
c
e
= 4.5V
e
20
鹵6.5
鹵5.2
33
2.5
1.6
20
鹵12
-55 to + 150
Linear Derating Factor
Gate-to-Source Voltage
Operating Junction and
Storage Temperature Range
mW/擄C
V
擄C
Thermal Resistance
R
胃JA
R
胃J-PCB
Junction-to-Ambient
e
Junction-to-PCB
Parameter
Typ.
鈥撯€撯€?/div>
35
Max.
50
鈥撯€撯€?/div>
Units
擄C/W
www.irf.com
1
09/25/03

IRF6156 產(chǎn)品屬性

  • 6,000

  • 分離式半導體產(chǎn)品

  • FET - 陣列

  • -

  • 2 個 N 溝道（雙）

  • 邏輯電平門

  • 20V

  • 6.5A

  • 40 毫歐 @ 6.5A，4.5V

  • 1.2V @ 250µA

  • 18nC @ 5V

  • 950pF @ 15V

  • 2.5W

  • 表面貼裝

  • 6-FlipFet?

  • 6-FlipFet?

  • 散裝

  • *IRF6156

IRF6156相關(guān)型號PDF文件下載

  • 型號
    版本
    描述
    廠商
    下載
  • 英文版
    N-Channel Power MOSFETs, 3.5A, 150-200V
    FAIRCHILD
  • 英文版
    3.3A, 200V, 1.500 Ohm, N-Channel Power MOSFET
    INTERSIL
  • 英文版
    N-Channel Power MOSFETs, 3.5A, 150-200V
    FAIRCHILD ...
  • 英文版
    3.3A, 200V, 1.500 Ohm, N-Channel Power MOSFET
    INTERSIL [...
  • 英文版
    N-Channel Power MOSFETs, 3.5A, 150-200V
    FAIRCHILD
  • 英文版
    N-Channel Power MOSFETs, 3.5A, 150-200V
    FAIRCHILD ...
  • 英文版
    N-Channel Power MOSFETs, 3.5A, 150-200V
    FAIRCHILD
  • 英文版
    N-Channel Power MOSFETs, 3.5A, 150-200V
    FAIRCHILD ...
  • 英文版
    N-Channel Power MOSFETs, 3.5A, 150-200V
    FAIRCHILD
  • 英文版
    N-Channel Power MOSFETs, 3.5A, 150-200V
    FAIRCHILD ...
  • 英文版
    2.0A, 250V, 2.0 Ohm, N-Channel Power MOSFET
    INTERSIL
  • 英文版
    2.0A, 250V, 2.0 Ohm, N-Channel Power MOSFET
    INTERSIL [...
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 1.6A I(D) ...
    ETC
  • 英文版
    N-Channel Power MOSFETs, 7A, 150-200V
    FAIRCHILD
  • 英文版
    5.0A, 200V, 0.800 Ohm, N-Channel Power MOSFET
    INTERSIL
  • 英文版
    N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
    STMICROELECTRONICS
  • 英文版
    Power MOSFET
    TRSYS
  • 英文版
    5.0A, 200V, 0.800 Ohm, N-Channel Power MOSFET
    INTERSIL [...
  • 英文版
    N-Channel Power MOSFETs, 7A, 150-200V
    FAIRCHILD ...
  • 英文版
    N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
    STMICROELECTRON...

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