鈩?/div>
I
D
0.6A
Benefits
l
Low Gate to Drain Charge to Reduce
Switching Losses
l
Fully Characterized Capacitance Including
Effective C
OSS
to Simplify Design, (See
App. Note AN1001)
l
Fully Characterized Avalanche Voltage
and Current
D
1
6
A
D
D
2
5
D
G
3
4
S
T op V iew
TSOP-6
Absolute Maximum Ratings
Parameter
I
D
@ T
A
= 25擄C
I
D
@ T
A
= 70擄C
I
DM
P
D
@T
A
= 25擄C
V
GS
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
聛
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
聠
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
0.6
0.48
4.8
2.0
0.016
鹵 30
9.6
-55 to + 150
300 (1.6mm from case )
Units
A
W
W/擄C
V
V/ns
擄C
Thermal Resistance
Symbol
R
胃JA
Parameter
Junction-to-Ambient
聞
Typ.
鈥撯€撯€?/div>
Max.
62.5
Units
擄C/W
Notes
聛
through
聠
are on page 8
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1
01/17/01
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