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IRF540ZS Datasheet

  • IRF540ZS

  • AUTOMOTIVE MOSFET

  • 301.26KB

  • 12頁

  • IRF

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PD - 94758
AUTOMOTIVE MOSFET
IRF540Z
IRF540ZS
IRF540ZL
HEXFET
Power MOSFET
D
Features
鈼?/div>
鈼?/div>
鈼?/div>
鈼?/div>
鈼?/div>
Advanced Process Technology
Ultra Low On-Resistance
175擄C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
G
V
DSS
= 100V
R
DS(on)
= 26.5m鈩?/div>
S
Description
Specifically designed for Automotive applications,
this HEXFET
Power MOSFET utilizes the latest
processing techniques to achieve extremely low on-
resistance per silicon area. Additional features of
this design are a 175擄C junction operating tempera-
ture, fast switching speed and improved repetitive
avalanche rating . These features combine to make
this design an extremely efficient and reliable device
for use in Automotive applications and a wide variety
of other applications.
I
D
= 36A
TO-220AB
IRF540Z
D
2
Pak
IRF540ZS
TO-262
IRF540ZL
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25擄C Continuous Drain Current, V
GS
@ 10V
(Silicon Limited)
I
D
@ T
C
= 100擄C Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
I
DM
Max.
36
25
140
92
Units
A
W
W/擄C
V
mJ
A
mJ
P
D
@T
C
= 25擄C Power Dissipation
Linear Derating Factor
V
GS
Gate-to-Source Voltage
E
AS (Thermally limited)
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy Tested Value
E
AS
(Tested )
d
0.61
鹵 20
I
AR
E
AR
T
J
T
STG
Avalanche Current
脙聶
h
83
120
See Fig.12a, 12b, 15, 16
-55 to + 175
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
g
i
擄C
300 (1.6mm from case )
10 lbf in (1.1N m)
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
R
胃JC
R
胃CS
R
胃JA
R
胃JA
Junction-to-Case
Case-to-Sink, Flat Greased Surface
Junction-to-Ambient
y
y
Typ.
Max.
1.64
鈥撯€撯€?/div>
62
40
Units
擄C/W
i
i
鈥撯€撯€?/div>
0.50
鈥撯€撯€?/div>
鈥撯€撯€?/div>
Junction-to-Ambient (PCB Mount)
j
www.irf.com
1
10/31/03

IRF540ZS 產(chǎn)品屬性

  • 50

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • HEXFET®

  • MOSFET N 通道,金屬氧化物

  • 標(biāo)準(zhǔn)型

  • 100V

  • 36A

  • 26.5 毫歐 @ 22A,10V

  • 4V @ 250µA

  • 63nC @ 10V

  • 1770pF @ 25V

  • 92W

  • 表面貼裝

  • TO-263-3,D²Pak(2 引線+接片),TO-263AB

  • D2PAK

  • 管件

  • *IRF540ZS

IRF540ZS相關(guān)型號PDF文件下載

  • 型號
    版本
    描述
    廠商
    下載
  • 英文版
    Analog IC
    ETC
  • 英文版
    Analog IC
    ETC
  • 英文版
    50W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUM...
    ETC
  • 英文版
    50W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUM...
    ETC [ETC]
  • 英文版
    5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET
    INTERSIL
  • 英文版
    N-Channel Power MOSFETs, 5.5 A, 60-100V
    FAIRCHILD
  • 英文版
    Power MOSFET(Vdss=100V, Rds(on)=0.54ohm, Id=5.6A)
    IRF
  • 英文版
    N-Channel Enhancement-Mode Vertical DMOS Power FETs
    SUPERTEX
  • 英文版
    Power MOSFET(Vdss=100V, Rds(on)=0.54ohm, Id=5.6A)
    IRF [Inter...
  • 英文版
    N-Channel Power MOSFETs, 5.5 A, 60-100V
    FAIRCHILD ...
  • 英文版
    N-Channel Enhancement-Mode Vertical DMOS Power FETs
    SUTEX [Sup...
  • 英文版
    5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET
    INTERSIL [...
  • 英文版
    N-Channel Power MOSFETs, 5.5 A, 60-100V
    FAIRCHILD
  • 英文版
    N-Channel Enhancement-Mode Vertical DMOS Power FETs
    SUPERTEX
  • 英文版
    N-Channel Power MOSFETs, 5.5 A, 60-100V
    FAIRCHILD ...
  • 英文版
    N-Channel Enhancement-Mode Vertical DMOS Power FETs
    SUTEX [Sup...
  • 英文版
    N-Channel Enhancement-Mode Vertical DMOS Power FETs
    SUPERTEX
  • 英文版
    N-Channel Power MOSFETs, 5.5 A, 60-100V
    FAIRCHILD
  • 英文版
    N-Channel Power MOSFETs, 5.5 A, 60-100V
    FAIRCHILD ...
  • 英文版
    N-Channel Power MOSFETs, 5.5 A, 60-100V
    FAIRCHILD

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