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IRF520VSTRR Datasheet

  • IRF520VSTRR

  • TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 9.6A I(D) ...

  • 10頁

  • ETC

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PD - 94306
HEXFET
廬
Power MOSFET
l
l
l
l
l
l
l
IRF520VS
IRF520VL
V
DSS
= 100V
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175擄C Operating Temperature
Fast Switching
Fully Avalanche Rated
Optimized for SMPS Applications
D
R
DS(on)
= 0.165鈩?/div>
G
S
I
D
= 9.6A
Advanced HEXFET
廬
Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve extremely low on-
resistance per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of applications.
The D
2
Pak is a surface mount power package capable of accommodating
die sizes up to HEX-4. It provides the highest power capability and the
lowest possible on-resistance in any existing surface mount package. The
D
2
Pak is suitable for high current applications because of its low internal
connection resistance and can dissipate up to 2.0W in a typical surface
mount application.
The through-hole version (IRF520VL) is available for low-profile applications.
Description
D
2
Pak
IRF520VS
TO-262
IRF520VL
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25擄C
I
D
@ T
C
= 100擄C
I
DM
P
D
@T
C
= 25擄C
V
GS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
聡
Continuous Drain Current, V
GS
@ 10V
聡
Pulsed Drain Current
聛聡
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current
聛
Repetitive Avalanche Energy
聛
Peak Diode Recovery dv/dt
聝聡
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
9.6
6.8
37
44
0.29
鹵 20
9.2
4.4
7.0
-55 to + 175
300 (1.6mm from case )
Units
A
W
W/擄C
V
A
mJ
V/ns
擄C
Thermal Resistance
Parameter
R
胃JC
R
胃JA
Junction-to-Case
Junction-to-Ambient (
PCB Mounted, steady state
)**
Typ.
鈥撯€撯€?/div>
鈥撯€撯€?/div>
Max.
3.4
40
Units
擄C/W
www.irf.com
1
01/18/02

IRF520VSTRR相關型號PDF文件下載

  • 型號
    版本
    描述
    廠商
    下載
  • 英文版
    Analog IC
    ETC
  • 英文版
    Analog IC
    ETC
  • 英文版
    50W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUM...
    ETC
  • 英文版
    50W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUM...
    ETC [ETC]
  • 英文版
    5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET
    INTERSIL
  • 英文版
    N-Channel Power MOSFETs, 5.5 A, 60-100V
    FAIRCHILD
  • 英文版
    Power MOSFET(Vdss=100V, Rds(on)=0.54ohm, Id=5.6A)
    IRF
  • 英文版
    N-Channel Enhancement-Mode Vertical DMOS Power FETs
    SUPERTEX
  • 英文版
    Power MOSFET(Vdss=100V, Rds(on)=0.54ohm, Id=5.6A)
    IRF [Inter...
  • 英文版
    N-Channel Power MOSFETs, 5.5 A, 60-100V
    FAIRCHILD ...
  • 英文版
    N-Channel Enhancement-Mode Vertical DMOS Power FETs
    SUTEX [Sup...
  • 英文版
    5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET
    INTERSIL [...
  • 英文版
    N-Channel Power MOSFETs, 5.5 A, 60-100V
    FAIRCHILD
  • 英文版
    N-Channel Enhancement-Mode Vertical DMOS Power FETs
    SUPERTEX
  • 英文版
    N-Channel Power MOSFETs, 5.5 A, 60-100V
    FAIRCHILD ...
  • 英文版
    N-Channel Enhancement-Mode Vertical DMOS Power FETs
    SUTEX [Sup...
  • 英文版
    N-Channel Enhancement-Mode Vertical DMOS Power FETs
    SUPERTEX
  • 英文版
    N-Channel Power MOSFETs, 5.5 A, 60-100V
    FAIRCHILD
  • 英文版
    N-Channel Power MOSFETs, 5.5 A, 60-100V
    FAIRCHILD ...
  • 英文版
    N-Channel Power MOSFETs, 5.5 A, 60-100V
    FAIRCHILD

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