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PD - 94653B

AUTOMOTIVE MOSFET

IRF3205Z

IRF3205ZS

IRF3205ZL

HEXFET

廬

Power MOSFET

D

Features

鈼?/div>

Advanced Process Technology

Ultra Low On-Resistance

175擄C Operating Temperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

G

V

DSS

= 55V

R

DS(on)

= 6.5m鈩?/div>

S

Description

Specifically designed for Automotive applications,

this HEXFET

廬

Power MOSFET utilizes the latest

processing techniques to achieve extremely low on-

resistance per silicon area. Additional features of

this design are a 175擄C junction operating tempera-

ture, fast switching speed and improved repetitive

avalanche rating . These features combine to make

this design an extremely efficient and reliable device

for use in Automotive applications and a wide variety

of other applications.

I

D

= 75A

TO-220AB

IRF3205Z

D

2

Pak

IRF3205ZS

Max.

110

78

75

440

170

TO-262

IRF3205ZL

Units

A

Absolute Maximum Ratings

Parameter

I

D

@ T

C

= 25擄C Continuous Drain Current, V

GS

@ 10V

(Silicon Limited)

I

D

@ T

C

= 100擄C Continuous Drain Current, V

GS

@ 10V

I

D

@ T

C

= 25擄C Continuous Drain Current, V

GS

@ 10V

(Package Limited)

Pulsed Drain Current

I

DM

聶

P

D

@T

C

= 25擄C Power Dissipation

Linear Derating Factor

V

GS

Gate-to-Source Voltage

E

AS (Thermally limited)

Single Pulse Avalanche Energy

Single Pulse Avalanche Energy Tested Value

E

AS

(Tested )

W

W/擄C

V

mJ

A

mJ

d

1.1

鹵 20

I

AR

E

AR

T

J

T

STG

Avalanche Current

脙聶

h

180

250

See Fig.12a, 12b, 15, 16

-55 to + 175

Repetitive Avalanche Energy

Operating Junction and

Storage Temperature Range

g

i

擄C

300 (1.6mm from case )

10 lbf in (1.1N m)

Soldering Temperature, for 10 seconds

Mounting Torque, 6-32 or M3 screw

Thermal Resistance

Parameter

R

胃JC

R

胃CS

R

胃JA

R

胃JA

Junction-to-Case

Case-to-Sink, Flat Greased Surface

Junction-to-Ambient

y

Typ.

Max.

0.90

鈥撯€撯€?/div>

62

40

Units

擄C/W

i

鈥撯€撯€?/div>

0.50

鈥撯€撯€?/div>

Junction-to-Ambient (PCB Mount)

j

www.irf.com

1

10/7/03

標(biāo)準(zhǔn)包裝
50
類別
分離式半導(dǎo)體產(chǎn)品
家庭
FET - 單
系列
HEXFET®
FET 型
MOSFET N 通道，金屬氧化物
FET 特點
標(biāo)準(zhǔn)型
漏極至源極電壓(Vdss)
55V
電流 - 連續(xù)漏極(Id) @ 25° C
75A
開態(tài)Rds（最大）@ Id, Vgs @ 25° C
6.5 毫歐 @ 66A，10V
Id 時的 Vgs(th)（最大）
4V @ 250µA
閘電荷(Qg) @ Vgs
110nC @ 10V
輸入電容 (Ciss) @ Vds
3450pF @ 25V
功率 - 最大
170W
安裝類型
通孔
封裝/外殼
TO-220-3
供應(yīng)商設(shè)備封裝
TO-220AB
包裝
管件
其它名稱
*IRF3205Z

IRF3205Z相關(guān)型號PDF文件下載

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IRF3205Z Datasheet

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