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IRF2907ZL Datasheet

  • IRF2907ZL

  • AUTOMOTIVE MOSFET

  • 12頁

  • IRF

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PD - 95872
AUTOMOTIVE MOSFET
IRF2907Z
IRF2907ZS
IRF2907ZL
HEXFET
廬
Power MOSFET
D
Features
l
l
l
l
l
Advanced Process Technology
Ultra Low On-Resistance
175擄C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
V
DSS
= 75V
R
DS(on)
= 4.5m鈩?/div>
聣
G
S
Description
Specifically designed for Automotive applications,
this HEXFET
廬
Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175擄C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating . These features com-
bine to make this design an extremely efficient
and reliable device for use in Automotive applica-
tions and a wide variety of other applications.
I
D
= 75A
TO-220AB
IRF2907Z
D
2
Pak
IRF2907ZS
TO-262
IRF2907ZL
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25擄C
I
D
@ T
C
= 100擄C
I
D
@ T
C
= 25擄C
I
DM
P
D
@T
C
= 25擄C
V
GS
E
AS
E
AS
(tested)
I
AR
E
AR
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (See Fig. 9)
Continuous Drain Current, V
GS
@ 10V
(Package Limited)
Pulsed Drain Current
Max.
170
120
75
680
330
2.2
鹵 20
300
690
See Fig.12a,12b,15,16
-55 to + 175
300 (1.6mm from case )
10 lbf鈥n (1.1N鈥)
Units
A
c
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
W
W/擄C
V
mJ
A
mJ
擄C
c
i
d
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
h
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Thermal Resistance
R
胃JC
R
胃CS
R
胃JA
R
胃JA
Junction-to-Case
k
Parameter
Typ.
鈥撯€撯€?/div>
0.50
Max.
0.45
鈥撯€撯€?/div>
62
40
Units
擄C/W
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
k
Junction-to-Ambient (PCB Mount, steady state)
jk
鈥撯€撯€?/div>
鈥撯€撯€?/div>
HEXFET
廬
is a registered trademark of International Rectifier.
www.irf.com
1
06/17/04

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    FAIRCHILD
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    N-CHANNEL POWER MOSFETS
    SAMSUNG [S...
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    N-Channel Power MOSFETs, 7A, 150-200V
    FAIRCHILD ...
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    4.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Pow...
    INTERSIL [...
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    N-Channel Power MOSFETs, 7A, 150-200V
    FAIRCHILD
  • 英文版
    N-CHANNEL POWER MOSFETS
    SAMSUNG
  • 英文版
    4.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Pow...
    INTERSIL
  • 英文版
    4.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Pow...
    INTERSIL [...
  • 英文版
    N-CHANNEL POWER MOSFETS
    SAMSUNG [S...
  • 英文版
    N-Channel Power MOSFETs, 7A, 150-200V
    FAIRCHILD ...

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