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IRF2903Z Datasheet

  • IRF2903Z

  • HEXFET Power MOSFET

  • 415.09KB

  • 12頁

  • IRF

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PD - 96988A
AUTOMOTIVE MOSFET
IRF2903Z
IRF2903ZS
IRF2903ZL
HEXFET
廬
Power MOSFET
D
Features
l
l
l
l
l
Advanced Process Technology
Ultra Low On-Resistance
175擄C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
D
V
DSS
= 30V
R
DS(on)
= 2.4m鈩?/div>
G
S
Description
Specifically designed for Automotive applications,
this HEXFET
廬
Power MOSFET utilizes the latest
processing techniques to achieve extremely low on-
resistance per silicon area. Additional features of
this design are a 175擄C junction operating tempera-
ture, fast switching speed and improved repetitive
avalanche rating . These features combine to make
this design an extremely efficient and reliable device
for use in Automotive applications and a wide variety
of other applications.
I
D
= 75A
D
D
G
D
S
G
D
S
G
D
S
TO-220AB
IRF2903Z
G
D
2
Pak
IRF2903ZS
D
TO-262
IRF2903ZL
S
Absolute Maximum Ratings
Gate
Drain
Max.
260
180
75
1020
290
2.0
鹵 20
Source
Units
A
Parameter
I
D
@ T
C
= 25擄C Continuous Drain Current, V
GS
@ 10V
(Silicon Limited)
I
D
@ T
C
= 100擄C Continuous Drain Current, V
GS
@ 10V
(Silicon Limited)
I
D
@ T
C
= 25擄C Continuous Drain Current, V
GS
@ 10V
(Package Limited)
I
DM
Pulsed Drain Current
聶
P
D
@T
C
= 25擄C Power Dissipation
Linear Derating Factor
V
GS
E
AS
(Tested )
I
AR
E
AR
T
J
T
STG
Gate-to-Source Voltage
E
AS (Thermally limited)
Single Pulse Avalanche Energy
Avalanche Current
W
W/擄C
V
mJ
A
mJ
d
Single Pulse Avalanche Energy Tested Value
脙聶
h
290
820
See Fig.12a, 12b, 15, 16
-55 to + 175
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
g
i
擄C
300 (1.6mm from case )
10 lbf in (1.1N m)
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
R
胃JC
R
胃CS
R
胃JA
R
胃JA
Junction-to-Case
y
y
k
Parameter
Typ.
Max.
0.51
鈥撯€撯€?/div>
62
40
Units
擄C/W
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
ik
i
jk
鈥撯€撯€?/div>
0.50
鈥撯€撯€?/div>
鈥撯€撯€?/div>
Junction-to-Ambient (PCB Mount, steady state)
www.irf.com
1
8/26/05

IRF2903Z相關(guān)型號(hào)PDF文件下載

  • 型號(hào)
    版本
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    N-Channel Power MOSFETs, 7A, 150-200V
    FAIRCHILD ...
  • 英文版
    4.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Pow...
    INTERSIL [...
  • 英文版
    N-CHANNEL POWER MOSFETS
    SAMSUNG
  • 英文版
    4.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Pow...
    INTERSIL
  • 英文版
    N-Channel Power MOSFETs, 7A, 150-200V
    FAIRCHILD
  • 英文版
    N-CHANNEL POWER MOSFETS
    SAMSUNG [S...
  • 英文版
    N-Channel Power MOSFETs, 7A, 150-200V
    FAIRCHILD ...
  • 英文版
    4.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Pow...
    INTERSIL [...
  • 英文版
    N-Channel Power MOSFETs, 7A, 150-200V
    FAIRCHILD
  • 英文版
    N-CHANNEL POWER MOSFETS
    SAMSUNG
  • 英文版
    4.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Pow...
    INTERSIL
  • 英文版
    4.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Pow...
    INTERSIL [...
  • 英文版
    N-CHANNEL POWER MOSFETS
    SAMSUNG [S...
  • 英文版
    N-Channel Power MOSFETs, 7A, 150-200V
    FAIRCHILD ...

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