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IRF2204 Datasheet

  • IRF2204

  • AUTOMOTIVE MOSFET

  • 9頁

  • IRF

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上傳產(chǎn)品規(guī)格書

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PD - 94434
AUTOMOTIVE MOSFET
IRF2204
Typical Applications
鈼?/div>
鈼?/div>
HEXFET
廬
Power MOSFET
D
Electric Power Steering
14 Volts Automotive Electrical Systems
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175擄C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
V
DSS
= 40V
G
S
Features
鈼?/div>
鈼?/div>
鈼?/div>
鈼?/div>
鈼?/div>
鈼?/div>
R
DS(on)
= 3.6m鈩?/div>
I
D
= 210A聠
Description
Specifically designed for Automotive applications, this HEXFET
廬
Power MOSFET
utilizes the lastest processing techniques to achieve extremely low on-resistance
per silicon area. Additional features of this design are a 175擄C junction operating
temperature, fast switching speed and improved repetitive avalanche rating.
These features combine to make this design an extremely efficient and reliable
device for use in Automotive applications and a wide variety of other applications.
TO-220AB
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25擄C
I
D
@ T
C
= 100擄C
I
DM
P
D
@T
C
= 25擄C
V
GS
E
AS
I
AR
E
AR
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
聛
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy聜
Avalanche Current聛
Repetitive Avalanche Energy聡
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Max.
210聠
150聠
850
330
2.2
鹵 20
460
See Fig.12a, 12b, 15, 16
-55 to + 175
300 (1.6mm from case )
10 lbf鈥n (1.1N鈥)
Units
A
W
W/擄C
V
mJ
A
mJ
擄C
Thermal Resistance
Parameter
R
胃JC
R
胃CS
R
胃JA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
鈥撯€撯€?/div>
0.50
鈥撯€撯€?/div>
Max.
0.45
鈥撯€撯€?/div>
62
Units
擄C/W
www.irf.com
1
08/07/02

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    N-Channel Power MOSFETs, 7A, 150-200V
    FAIRCHILD ...
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    4.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Pow...
    INTERSIL [...
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    N-Channel Power MOSFETs, 7A, 150-200V
    FAIRCHILD
  • 英文版
    N-CHANNEL POWER MOSFETS
    SAMSUNG
  • 英文版
    4.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Pow...
    INTERSIL
  • 英文版
    4.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Pow...
    INTERSIL [...
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    N-CHANNEL POWER MOSFETS
    SAMSUNG [S...
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    N-Channel Power MOSFETs, 7A, 150-200V
    FAIRCHILD ...

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