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IRF1503 Datasheet

  • IRF1503

  • AUTOMOTIVE MOSFET

  • 552.43KB

  • 9頁(yè)

  • IRF

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PD-94526A
AUTOMOTIVE MOSFET
Typical Applications
鈼?/div>
鈼?/div>
IRF1503
D
HEXFET
廬
Power MOSFET
V
DSS
= 30V
G
S
14V Automotive Electrical Systems
14V Electronic Power Steering
Advanced Process Technology
Ultra Low On-Resistance
175擄C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Features
鈼?/div>
鈼?/div>
鈼?/div>
鈼?/div>
鈼?/div>
R
DS(on)
= 3.3m鈩?/div>
I
D
= 75A
Description
Specifically designed for Automotive applications, this
design of HEXFET
廬
Power MOSFETs utilizes the lastest
processing techniques to achieve extremely low on-
resistance per silicon area. Additional features of this
HEXFET power MOSFET are a 175擄C junction operating
temperature, fast switching speed and improved repetitive
avalanche rating. These combine to make this design an
extremely efficient and reliable device for use in Automotive
applications and a wide variety of other applications.
TO-220AB
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25擄C
I
D
@ T
C
= 100擄C
I
D
@ T
C
= 25擄C
I
DM
P
D
@T
C
= 25擄C
V
GS
E
AS
E
AS
(tested)
I
AR
E
AR
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V (Silicon limited)
Continuous Drain Current, V
GS
@ 10V (See Fig.9)
Continuous Drain Current, V
GS
@ 10V (Package limited)
Pulsed Drain Current
聛
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy聜
Single Pulse Avalanche Energy Tested Value聠
Avalanche Current聛
Repetitive Avalanche Energy聟
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
240
170
75
960
330
2.2
鹵 20
510
980
See Fig.12a, 12b, 15, 16
-55 to + 175
Units
A
W
W/擄C
V
mJ
A
mJ
擄C
300 (1.6mm from case )
Thermal Resistance
Parameter
R
胃JC
R
胃CS
R
胃JA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
鈥撯€撯€?/div>
0.50
鈥撯€撯€?/div>
Max.
0.45
鈥撯€撯€?/div>
62
Units
擄C/W
www.irf.com
1
12/11/02

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    INTERSIL [...
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    N-CHANNEL POWER MOSFETS
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    N-Channel Power MOSFETs, 11 A, 60-100 V
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    N-Channel Power MOSFETs, 11 A, 60-100 V
    FAIRCHILD
  • 英文版
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    SAMSUNG
  • 英文版
    8.0A and 9.2A, 80V and 100V, 0.27 and 0.36 Ohm, N-Channel, P...
    INTERSIL
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