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IRF1503S Datasheet

  • IRF1503S

  • 30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package

  • 659.90KB

  • 11頁

  • ETC

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PD - 94494A
Typical Applications
鈼?/div>
鈼?/div>
HEXFET
廬
Power MOSFET
D
IRF1503S
IRF1503L
V
DSS
= 30V
R
DS(on)
= 3.3m鈩?/div>
14V Automotive Electrical Systems
14V Electronic Power Steering
Advanced Process Technology
Ultra Low On-Resistance
175擄C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Benefits
鈼?/div>
鈼?/div>
鈼?/div>
鈼?/div>
鈼?/div>
G
S
I
D
= 75A
Description
Specifically designed for Automotive applications, this Stripe Planar
design of HEXFET
廬
Power MOSFETs utilizes the lastest processing
techniques to achieve extremely low on-resistance per silicon area.
Additional features of this HEXFET power MOSFET are a 175擄C
junction operating temperature, fast switching speed and improved
repetitive avalanche rating. These benefits combine to make this
design an extremely efficient and reliable device for use in Automotive
applications and a wide variety of other applications.
D
2
Pak
IRF1503S
TO-262
IRF1503L
Absolute Maximum Ratings
Parameter
I
D
@ T
C
I
D
@ T
C
I
D
@ T
C
I
DM
P
D
@T
C
= 25擄C
= 100擄C
= 25擄C
= 25擄C
Continuous Drain Current, V
GS
@ 10V (Silicon limited)
Continuous Drain Current, V
GS
@ 10V (See Fig.9)
Continuous Drain Current, V
GS
@ 10V (Package limited)
Pulsed Drain Current
聛
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy聜
Single Pulse Avalanche Energy Tested Value聠
Avalanche Current聛
Repetitive Avalanche Energy聟
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Max.
190
130
75
960
200
1.3
鹵 20
510
980
See Fig.12a, 12b, 15, 16
-55 to + 175
300 (1.6mm from case )
10 lbf鈥n (1.1N鈥)
Units
A
V
GS
E
AS
E
AS
(tested)
I
AR
E
AR
T
J
T
STG
W
W/擄C
V
mJ
A
mJ
擄C
Thermal Resistance
Parameter
R
胃JC
R
胃CS
R
胃JA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
鈥撯€撯€?/div>
0.50
鈥撯€撯€?/div>
Max.
0.75
鈥撯€撯€?/div>
62
Units
擄C/W
www.irf.com
1
12/11/02

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    N-Channel Power MOSFETs, 11 A, 60-100 V
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    FAIRCHILD
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    8.0A and 9.2A, 80V and 100V, 0.27 and 0.36 Ohm, N-Channel, P...
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