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IRF1407 Datasheet

  • IRF1407

  • Power MOSFET(Vdss=75V, Rds(on)=0.0078ohm, Id=130A)

  • 129.54KB

  • 9頁

  • IRF

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PD - 93907
AUTOMOTIVE MOSFET
Typical Applications
q
q
IRF1407
HEXFET
廬
Power MOSFET
D
Integrated Starter Alternator
42 Volts Automotive Electrical Systems
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175擄C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
V
DSS
= 75V
G
S
Benefits
q
q
q
q
q
q
R
DS(on)
= 0.0078鈩?/div>
I
D
= 130AV
Description
Specifically designed for Automotive applications, this Stripe Planar
design of HEXFET
廬
Power MOSFETs utilizes the lastest processing
techniques to achieve extremely low on-resistance per silicon area.
Additional features of this HEXFET power MOSFET are a 175擄C junction
operating temperature, fast switching speed and improved repetitive
avalanche rating. These benefits combine to make this design an extremely
efficient and reliable device for use in Automotive applications and a wide
variety of other applications.
TO-220AB
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25擄C
I
D
@ T
C
= 100擄C
I
DM
P
D
@T
C
= 25擄C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Q
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche EnergyR
Avalanche CurrentQ
Repetitive Avalanche EnergyW
Peak Diode Recovery dv/dt
S
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Max.
130V
92V
520
330
2.2
鹵 20
390
See Fig.12a, 12b, 15, 16
4.6
-55 to + 175
300 (1.6mm from case )
10 lbf鈥n (1.1N鈥)
Units
A
W
W/擄C
V
mJ
A
mJ
V/ns
擄C
Thermal Resistance
Parameter
R
胃JC
R
胃CS
R
胃JA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
鈥撯€撯€?/div>
0.50
鈥撯€撯€?/div>
Max.
0.45
鈥撯€撯€?/div>
62
Units
擄C/W
www.irf.com
1
10/11/01

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