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IRF1302 Datasheet

  • IRF1302

  • Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=180A)

  • 9頁

  • IRF

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PD - 94591
AUTOMOTIVE MOSFET
IRF1302
HEXFET
廬
Power MOSFET
D
Benefits
鈼?/div>
鈼?/div>
鈼?/div>
鈼?/div>
鈼?/div>
鈼?/div>
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175擄C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
V
DSS
= 20V
G
S
R
DS(on)
= 4.0m鈩?/div>
I
D
= 180A
Description
Specifically designed for Automotive applications, this Stripe Planar
design of HEXFET
廬
Power MOSFET utilizes the lastest processing
techniques to achieve extremely low on-resistance per silicon area.
Additional features of this design are a 175擄C junction operating
temperature, fast switching speed and improved repetitive avalanche
rating. These benefits combine to make this design an extremely efficient
and reliable device for use in Automotive applications and a wide variety
of other applications.
TO-220AB
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25擄C
I
D
@ T
C
= 100擄C
I
DM
P
D
@T
C
= 25擄C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
180
130
700
230
1.5
鹵 20
350
See Fig.12a, 12b, 15, 16
TBD
-55 to + 175
300 (1.6mm from case )
Units
A
W
W/擄C
V
mJ
A
mJ
V/ns
擄C
Thermal Resistance
Parameter
R
胃JC
R
胃CS
R
胃JA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient (PCB mount)
Typ.
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0.50
鈥撯€撯€?/div>
Max.
0.65
鈥撯€撯€?/div>
62
Units
擄C/W
www.irf.com
1
10/31/02

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    INTERSIL [...
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    SAMSUNG [S...
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    N-Channel Power MOSFETs, 11 A, 60-100 V
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    N-Channel Power MOSFETs, 11 A, 60-100 V
    FAIRCHILD
  • 英文版
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    SAMSUNG
  • 英文版
    8.0A and 9.2A, 80V and 100V, 0.27 and 0.36 Ohm, N-Channel, P...
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