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IR53H214 Datasheet

  • IR53H214

  • 84.78KB

  • 8頁

  • ETC

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Preliminary Data Sheet No. PD60140J
IR53H(D)420(-P2)
SELF-OSCILLATING HALF BRIDGE
Features
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Output power MOSFETs in half-bridge configuration
High side gate drive designed for bootstrap operation
Bootstrap diode integrated into package (HD type)
Tighter initial deadtime control
Low temperature coefficient deadtime
15.6V zener clamped Vcc for offline operation
Half-bridge output is out of phase with R
T
True micropower startup
Shutdown feature (1/6th V
CC
) on C
T
lead
Increased undervoltage lockout hysteresis (1Volt)
Lower power level-shifting circuit
Lower di/dt gate drive for better noise immunity
Excellent latch immunity on all inputs and outputs
ESD protection on all leads
Constant V
O
pulse width at startup
Heatsink package version (P2 type)
Product Summary
VIN (max)
Duty Cycle
Deadtime (type.)
Rds(on)
500V
50%
1.2碌s
3.0鈩?/div>
PD (TA = 25
o
C) 2.0W or 3.0W
Package
Description
The IR53H(D)420(-P2) are complete high voltage, high speed,
self-oscillating half-bridge circuits. Proprietary HVIC and latch
immune CMOS technologies, along with the HEXFET
廬
power
MOSFET technology, enable ruggedized single package con-
struction. The front-end features a programmable oscillator
which functions similar to the CMOS 555 timer. The supply to
the control circuit has a zener clamp to simplify offline opera-
tion. The output features two HEXFETs in a half-bridge con-
figuration with an internally set deadtime designed for mini-
mum cross-conduction in the half-bridge. Propagation delays
7 Pin Lead SIP
for the high and low side power MOSFETs
are matched to simplify use in 50% duty
cycle applications. The device can oper-
ate up to the V
IN
(max) rating.
Typical Connection
HV DC Bus
VIN
IR53H(D)420(-P2)
D1
1
Vcc
V
B
6
External
Fast recovery diode D1 is not
required for HD type
2
R
T
3
C
T
4
R
T
V
IN
9
C
T
VO
7
COM
TO,
LOAD
COM

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