鈥?/div>
Fully operational to +600V
Tolerant to negative transient voltage
dV/dt immune
Gate drive supply range from 10 to 20V
Undervoltage lockout for both channels
3.3V, 5V and 15V input logic compatible
Cross-conduction prevention logic
Matched propagation delay for both channels
High side output in phase with IN input
Logic and power ground +/- 5V offset
Internal 540ns dead-time
Lower di/dt gate driver for better noise immunity
Product Summary
V
OFFSET
I
O
+/-
V
OUT
t
on/off
(typ.)
Dead Time
600V max.
120 mA / 250 mA
10 - 20V
750 & 200 ns
540 ns
Packages
Description
The IR21093(S) are high voltage, high speed power
MOSFET and IGBT drivers with dependent high and
low side referenced output channels. Proprietary HVIC
and latch immune CMOS technologies enable rugge-
8-Lead SOIC
8-Lead PDIP
dized monolithic construction. The logic input is
compatible with standard CMOS or LSTTL output,
down to 3.3V logic. The output drivers feature a high
pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to
drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts.
Typical Connection
up to 600V
V
CC
V
CC
IN
V
B
HO
V
S
TO
LOAD
IN
COM
LO
IR21093
(Refer to Lead Assignments for correct configuration). This/These diagram(s) show electrical connections only. Please refer to our
Application Notes and DesignTips for proper circuit board layout.
www.irf.com
1