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IR2103S Datasheet

  • IR2103S

  • HALF-BRIDGE DRIVER

  • 12頁(yè)

  • IRF

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Data Sheet No. PD60045-N
IR2103
(S)
HALF-BRIDGE DRIVER
Features
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Floating channel designed for bootstrap operation
Fully operational to +600V
Tolerant to negative transient voltage
dV/dt immune
Gate drive supply range from 10 to 20V
Undervoltage lockout
3.3V, 5V and 15V logic compatible
Cross-conduction prevention logic
Matched propagation delay for both channels
Internal set deadtime
High side output in phase with HIN input
Low side output out of phase with
LIN
input
Product Summary
V
OFFSET
I
O
+/-
V
OUT
t
on/off
(typ.)
Deadtime (typ.)
600V max.
130 mA / 270 mA
10 - 20V
680 & 150 ns
520 ns
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Packages
Description
The IR2103(S) are high voltage, high speed power
MOSFET and IGBT drivers with dependent high and
low side referenced output channels. Proprietary HVIC
8-Lead SOIC
IR2103S
and latch immune CMOS technologies enable rug-
8-Lead PDIP
gedized monolithic construction. The logic input is
IR2103
compatible with standard CMOS or LSTTL output,
down to 3.3V logic. The output drivers feature a high
pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to
drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts.
Typical Connection
up to 600V
V
CC
V
CC
HIN
LIN
V
B
HO
V
S
LO
TO
LOAD
HIN
LIN
COM
(Refer to Lead Assignments for correct configuration). This/These diagram(s) show electrical connections only.
Please refer to our Application Notes and DesignTips for proper circuit board layout.
www.irf.com
1

IR2103S 產(chǎn)品屬性

  • 95

  • 集成電路 (IC)

  • PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開(kāi)關(guān)

  • -

  • 半橋

  • 反相和非反相

  • 680ns

  • 210mA

  • 1

  • 2

  • 600V

  • 10 V ~ 20 V

  • -40°C ~ 125°C

  • 表面貼裝

  • 8-SOIC（0.154"，3.90mm 寬）

  • 8-SOICN

  • 管件

  • *IR2103S

IR2103S相關(guān)型號(hào)PDF文件下載

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