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IR20153SPBF Datasheet

  • IR20153SPBF

  • HIGH SIDE DRIVER WITH RECHARGE

  • 15頁

  • IRF

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Preliminary Data Sheet PD60214 Rev B
IR20153S & (PbF)
HIGH SIDE DRIVER WITH RECHARGE
Features
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Floating channel designed for bootstrap operation
Fully operational up to 150V
Tolerant to negative transient voltage, dV/dt immune
Gate drive supply range from 5V to 20V
Undervoltage lockout
Internal recharge FET for bootstrap refresh
Internal deadtime of 11碌s and 0.8碌s
CMOS Schmitt-triggered input logic
Output out of phase with input
Reset input
Split pull-up and pull-down gate drive pins
Also available LEAD-FREE (PbF)
Product Summary
V
OFFSET
I
O
+/-
V
OUT
t
on/off
150V max.
400mA @ VBS=7V,
1.5A @ VBS=16V
5-20V
1.0 and 0.3
碌s
Description
The IR20153S is a high voltage, high speed power MOSFET driver . Proprietary HVIC
and latch immune CMOS technologies enable ruggedized monolithic construction. The
logic input is compatible with standard CMOS output down to 3.3V. The output driver
features a high pulse current buffer stage designed for minimum cross-conduction. The
floating channel can be used to drive an N-channel power MOSFET in the high or low
side configuration which operates up to 150 volts.
Package
8-Lead SOIC
Typical Connection
up to 150V
VCC
IN
VCC
IN
GND
VB
HOH
HOL
VS
RESET
RESET
(Refer to Lead Assignments
for correct configuration).
This/These diagram(s) show
electrical connections only.
Please refer to our Applica-
tion Notes and DesignTips
for proper circuit board lay-
out.
Load
www.irf.com
1

IR20153SPBF 產(chǎn)品屬性

  • 95

  • 集成電路 (IC)

  • PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開關(guān)

  • -

  • 高端

  • 反相

  • 1.0µs

  • 400mA

  • 1

  • 1

  • 150V

  • 5 V ~ 20 V

  • -55°C ~ 150°C

  • 表面貼裝

  • 8-SOIC（0.154"，3.90mm 寬）

  • 8-SOICN

  • 管件

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