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IR2011SPBF Datasheet

  • IR2011SPBF

  • HIGH AND LOW SIDE DRIVER

  • 143.81KB

  • 17頁

  • IRF

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Data Sheet No.PD60217 Rev A
IR2011(
S) & (PbF
)
HIGH AND LOW SIDE DRIVER
Features
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Floating channel designed for bootstrap operation
Product Summary
V
OFFSET
I
O
+/-
V
OUT
t
on/off
Delay Matching
200V max.
1.0A /1.0A typ.
10 - 20V
80 & 60 ns typ.
20 ns max.
Fully operational up to +200V
Tolerant to negative transient voltage, dV/dt immune
Gate drive supply range from 10V to 20V
Independent low and high side channels
Input logicHIN/LIN active high
Undervoltage lockout for both channels
3.3V and 5V input logic compatible
CMOS Schmitt-triggered inputs with pull-down
Matched propagation delay for both channels
8-Lead SOIC is also available LEAD-FREE (PbF)
Applications
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Audio Class D amplifiers
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High power DC-DC SMPS converters
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Other high frequency applications
Packages
Description
The IR2011 is a high power, high speed power MOSFET driver with independent high
and low side referenced output channels, ideal for Audio Class D and DC-DC converter
applications. Logic inputs are compatible with standard CMOS or LSTTL output, down
to 3.0V logic. The output drivers feature a high pulse current buffer stage designed for
minimum driver cross-conduction. Propagation delays are matched to simplify use in
high frequency applications. The floating channel can be used to drive an N-channel
power MOSFET in the high side configuration which operates up to 200 volts. Propri-
etary HVIC and latch immune CMOS technologies enable ruggedized monolithic con-
struction.
8-Lead SOIC
IR2011S
also available
LEAD-FREE (PbF)
8-Lead PDIP
IR2011
Typical Connection
200V
HIN
LIN
COM
5
HIN
LIN
COM
V
S
HO
V
B
V
CC
4
TO
LOAD
8
LO
1
V
CC
(Refer to Lead Assignments for correct configuration). This/These diagram(s) show electrical connections only. Please
refer to our Application Notes and DesignTips for proper circuit board layout.
www.irf.com
1

IR2011SPBF 產(chǎn)品屬性

  • 95

  • 集成電路 (IC)

  • PMIC - MOSFET，電橋驅(qū)動器 - 外部開關(guān)

  • -

  • 高端和低端，獨立

  • 非反相

  • 80ns

  • 1A

  • 1

  • 2

  • 200V

  • 10 V ~ 20 V

  • -40°C ~ 125°C

  • 表面貼裝

  • 8-SOIC（0.154"，3.90mm 寬）

  • 8-SOICN

  • 管件

  • *IR2011SPBF

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