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MOSFETs regardless of transformer output
Minimizes loss due to power MOSFET body
drain diode conduction
Stand alone operation - no ties to primary side
Schmitt trigger input with double pulse suppress-
ion allows operation in noisy environments
High peak current drive capability - 4A
High speed operation - 2MHz
Adaptable to multiple topologies
Description
The IR1176 is a high speed CMOS controller designed
to drive N-channel power MOSFETs used as synchro-
nous rectifiers in high current, high frequency forward
converters with output voltages equal or below 5V
DC
.
Schmitt trigger inputs with double pulse suppression
allow the controller to operate in noisy environments.
The circuit does not require any ties to the primary
side and derives its operating power directly from
the secondary. The circuit functions by anticipating
transformer output transitions, then turns the power
MOSFETs on or off before the transitions of the trans-
former to minimize body drain diode conduction and
reduce associated losses. Turn on/off lead time can
be adjusted to accommodate a variety of power
MOSFET sizes and circuit conditions. The IR1176 also
provides gate drive overlap/dead-time control via
external components to further minimize diode con-
duction by nulling effects of secondary loop and de-
vice package inductance.
Packages
IR1176S
20 Lead Surface Mount
(SSOP-20)
IR1176SS
20 Lead SOIC (MS-013AC)
IR1176
20 Lead PDIP
(MS-001AD)