IPS042G Datasheet

IC型號：
IPS042G
PDF描述：
DUAL FULLY PROTECTED POWER MOSFET SWITCH
文件大?。?/label>
94.96KB
PDF頁數(shù)：
10頁
芯片廠家：
IRF

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Data Sheet No.PD 60153-J

IPS042G

DUAL FULLY PROTECTED POWER MOSFET SWITCH

Features

鈥?/div>

Over temperature shutdown

Over current shutdown

Active clamp

Low current & logic level input

E.S.D protection

Product Summary

ds(on)

clamp

shutdown

off

500m

鈩?/div>

(max)

50V

1.5碌s

Description

The IPS042G is a fully protected dual low side SMART

POWER MOSFET that features over-current, over-tem-

perature, ESD protection and drain to source active

clamp.This device combines a HEXFET廬 POWER

MOSFET and a gate driver. It offers full protection

and high reliability required in harsh environments.

The driver allows short switching times and provides

efficient protection by turning OFF the power MOSFET

when the temperature exceeds 165

C or when the

drain current reaches 2A. This device restarts once

the input is cycled. The avalanche capability is

significantly enhanced by the active clamp and cov-

ers most inductive load demagnetizations.

Package

8-Lead SOIC

Typical Connection

Load

R in series

(if needed)

control

Logic signal

(Refer to lead assignment for correct pin configuration)

www.irf.com

標準包裝
95
類別
集成電路 (IC)
家庭
PMIC - MOSFET，電橋驅(qū)動器 - 內(nèi)部開關(guān)
系列
-
類型
低端
輸入類型
非反相
輸出數(shù)
2
導通狀態(tài)電阻
370 毫歐
電流 - 輸出 / 通道
530mA
電流 - 峰值輸出
3A
電源電壓
4 V ~ 6 V
工作溫度
-40°C ~ 150°C
安裝類型
表面貼裝
封裝/外殼
8-SOIC（0.154"，3.90mm 寬）
供應商設(shè)備封裝
8-SO
包裝
管件
其它名稱
*IPS042G

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