1.5 GHz Low Noise Self-Biased
Transistor Amplifier
Technical Data
INA-12063
Features
鈥?Integrated, Active Bias
Circuit
鈥?Single Positive Supply
Voltage (1.5 鈥?5V)
鈥?Current Adjustable, 1 to
10mA
鈥?2 dB Noise Figure at
900 MHz
鈥?16 dB Gain at 900 MHz
25 dB Gain at 100 MHz
Surface Mount Package
SOT-363 (SC-70)
Description
Hewlett-Packard鈥檚 INA-12063 is a
Silicon monolithic self-biased
transistor amplifier that offers
excellent gain and noise figure for
applications to 1.5 GHz. Packaged
in an ultra-miniature SOT-363
package, it requires half the board
space of a SOT-143 package.
The INA-12063 is a unique RFIC
that combines the performance
flexibility of a discrete transistor
with the simplicity of using an
integrated circuit. Using a pat-
ented bias circuit, the perfor-
mance and operating current of
the INA-12063 can be adjusted
over the 1 to 10 mA range.
The INA-12063 is fabricated using
HP鈥檚 30 GHz f
MAX
ISOSAT鈩?/div>
Silicon bipolar process which
uses nitride self-alignment
submicrometer lithography,
trench isolation, ion implantation,
gold metalization, and polyimide
intermetal dielectric and scratch
protection to achieve superior
performance, uniformity, and
reliability.
Pin Connections and
Package Marking
I
bias
1
RF OUTPUT
6 and V
C
5 GND 1
4 V
d
Applications
鈥?Amplifier Applications for
Cellular, Cordless, Special
Mobile Radio, PCS, ISM,
and Wireless LAN
Applications
12
GND 2 2
RF INPUT 3
Note:
Package marking provides orientation
and identification.
Equivalent Circuit
(Simplified)
V
d
ACTIVE
BIAS
CIRCUIT
GND 2
I
bias
RF
OUTPUT
and V
c
RF
INPUT
RF
FEEDBACK
NETWORK
GND 1
5965-5365E
6-116
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