鈥?, 100% min. at
鈥?, 300% min. at
鈥?, 400% min. at
鈥?, 500% min. at
鈥?/div>
V
VDE 0884 Available with Option 1
D E
Dimensions in inches (mm)
Single Channel
3
.248 (6.30)
.256 (6.50)
4
5
6
2
1
pin one ID
Anode 1
Cathode 2
NC 3
6
5
4
.335 (8.50)
.343 (8.70)
.039
(1.00)
Min.
4擄
typ.
.018 (0.45)
.022 (0.55)
.048 (0.45)
.022 (0.55)
.130 (3.30)
.150 (3.81)
18擄
.031 (0.80) min.
.031 (0.80)
.035 (0.90)
.100 (2.54) typ.
3擄鈥?擄
.010 (.25)
typ.
.300鈥?347
(7.62鈥?.81)
.114 (2.90)
.130 (3.0)
.300 (7.62)
typ.
DESCRIPTION
IL66, ILD66, and ILQ66 are optically coupled iso-
lators employing Gallium Arsenide infrared emit-
ters and silicon photodarlington detectors.
Switching can be accomplished while maintaining
a high degree of isolation between driving and
load circuits, with no crosstalk between channels.
Maximum Ratings
Emitter
Each Channel
Peak Reverse Voltage .................................... 6.0 V
Continuous Forward Current ........................ 60 mA
Power Dissipation at 25
擄
C......................... 100 mW
Derate Linearly from 25
擄
C ................... 1.33 mW/
擄
C
Detector
(Each Channel)
Power Dissipation at 25
擄
C Ambient .......... 150 mW
Derate Linearly from 25
擄
C ..................... 2.0 mW/
擄
C
Package
Isolation Test Voltage (t=1.0 sec.) ......... 5300 V
RMS
Total Package Power Dissipation at 25
擄
C
IL66.......................................................... 250 mW
ILD66 ....................................................... 400 mW
ILQ66....................................................... 500 mW
Derate Linearly from 25
擄
C
IL66...................................................... 3.3 mW/
擄
C
ILD66 ................................................. 5.33 mW/
擄
C
ILQ66................................................. 6.67 mW/
擄
C
Creepage ....................................................
鈮?/div>
7 min
Clearance ....................................................
鈮?/div>
7 min
Comparative Tracking Index .............................175
Isolation Resistance
V
IO
=500 V,
T
A
=25
擄
C...............................
鈮?/div>
10
12
鈩?/div>
V
IO
=500 V,
T
A
=100
擄
C.............................
鈮?/div>
10
11
鈩?/div>
Storage Temperature................... 鈥?5
擄
C to +125
擄
C
Operating Temperature ............... 鈥?5擄C to +100
擄
C
Lead Soldering Time at 260
擄
C ....................10 sec.
Dual Channel
pin one ID
4
.255 (6.48)
.268 (6.81)
5
6
7
8
3
2
1
Anode
1
8 Emitter
7 Collector
6 Collector
5 Emitter
Cathode 2
Cathode 3
Anode 4
.379 (9.63)
.390 (9.91)
.030 (0.76)
.045 (1.14)
4擄 typ.
.031 (0.79)
.130 (3.30)
.150 (3.81)
.050 (1.27)
.018 (.46)
.022 (.56)
.020 (.51 )
.035 (.89 )
.100 (2.54) typ.
.300 (7.62)
typ.
10擄
3擄鈥?擄
.008 (.20)
.012 (.30)
pin one ID
Anode
Cathode
Cathode
1
2
3
4
5
6
7
8
.230(5.84)
.110 (2.79) .250(6.35)
.130 (3.30)
Quad Channel
16 Emitter
15 Collector
14 Collector
13 Emitter
12 Emitter
11 Collector
10 Collector
9
Emitter
8
7
6
5
4
3
2
1
.255 (6.48)
.265 (6.81)
Anode
Anode
9
10
11 12
13
14
15
16
Cathode
Cathode
.779 (19.77 )
.790 (20.07)
.030 (.76)
.045 (1.14)
.031(.79)
.130 (3.30)
.150 (3.81)
4擄
.018 (.46)
.022 (.56)
.020(.51)
.035 (.89)
.100 (2.54)typ.
.050 (1.27)
Anode
.300 (7.62)
typ.
.110 (2.79)
.130 (3.30) .230 (5.84)
.250 (6.35)
10擄
typ.
3擄鈥?擄
.008 (.20)
.012 (.30)
錚?/div>
2001 In鏗乶eon Technologies Corp. 鈥?Optoelectronics Division 鈥?San Jose, CA
www.in鏗乶eon.com/opto 鈥?1-888-In鏗乶eon (1-888-463-4636)
2鈥?5
March 1, 2000-00
next
IL66-4 產(chǎn)品屬性
Vishay
晶體管輸出光電耦合器
1 Channel
DC
60 V
1 V
5300 Vrms
750 %
1.5 V
250 mW
+ 100 C
- 55 C
PDIP-6
Tube
200 us
60 mA
200 us
Photodarlington
DC
2000
IL66-4相關(guān)型號(hào)PDF文件下載
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型號(hào)
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