鈥?/div>
V
VDE 0884 Available with Option 1
D E
Dimensions in inches (mm)
3
.248 (6.30)
.256 (6.50)
4
5
6
2
1
pin one ID
Anode 1
Cathode 2
NC 3
6
5
4
Base
Collector
Emitter
.335 (8.50)
.343 (8.70)
.039
(1.00)
Min.
4擄
typ.
.018 (0.45)
.022 (0.55)
.048 (0.45)
.022 (0.55)
.130 (3.30)
.150 (3.81)
18擄
.031 (0.80) min.
.031 (0.80)
.035 (0.90)
.100 (2.54) typ.
3擄鈥?擄
.010 (.25)
typ.
.300鈥?347
(7.62鈥?.81)
.114 (2.90)
.130 (3.0)
.300 (7.62)
typ.
DESCRIPTION
The IL201/202/203 are optically coupled pairs
employing a Gallium Arsenide infrared LED and a
Silicon NPN phototransistor. Signal information,
including a DC level, can be transmitted by the
device while maintaining a high degree of electri-
cal isolation between input and output. The
IL201/202/203 can be used to replace relays and
transformers in many digital interface applica-
tions, as well as analog applications such as CRT
modulation.
Maximum Ratings
Emitter
Peak Reverse Voltage .................................. 6.0 V
Continuous Forward Current ...................... 60 mA
Power Dissipation at 25
擄
C....................... 100 mW
Derate Linearly from 25
擄
C ................. 1.33 mW/
擄
C
Detector
Collector-Emitter Breakdown Voltage,
BV
CEO
........................................................ 70 V
Emitter-Collector Breakdown Voltage,
BV
ECO
....................................................... 7.0 V
Collector-Base Breakdown Voltage,
BV
CBO
....................................................... 70 V
Power Dissipation.................................... 200 mW
Derate Linearly from 25
擄
C ................... 2.6 mW/
擄
C
Package
Isolation Test Voltage (t=1.0 sec.) ...... 5300 V
RMS
Total Package Dissipation at 25
擄
C A
(LED + Detector).................................. 250 mW
Derate Linearly from 25
擄
C ................... 3.3 mW/
擄
C
Creepage ...............................................
鈮?/div>
7.0 min
Clearance ...............................................
鈮?/div>
7.0 min
Storage Temperature ................ 鈥?5
擄
C to +150
擄
C
Operating Temperature ............ 鈥?5
擄
C to +100
擄
C
Lead Soldering Time at 260
擄
C ..................10 sec.
Characteristics
0
擄
C to 70
擄
C unless otherwise speci鏗乪d
Parameter
Emitter
Forward Voltage
Forward Voltage
Breakdown Voltage
Reverse Current
Detector
Transistor Gain
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Collector
Breakdown Voltage
Collector-Base
Leakage Current
Collector-Emitter
Package
Base Current Transfer
Ratio
CTRCB
V
CEsat
DC Current Transfer Ratio CTR
IL201
IL202
IL203
DC Current Transfer Ratio CTR
IL201
IL202
IL203
0.15
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
0.4
%
V
%
75
125
225
10
30
50
100
200
300
鈥?/div>
150
250
450
鈥?/div>
%
I
F
=10 mA
V
CB
=10 V
I
F
=10 mA
I
C
=2.0 mA
I
F
=10 mA,
V
CE
=10 V
HFE
BV
CEO
BV
ECO
BV
CBO
I
CEO
100
70
7.0
70
鈥?/div>
200
鈥?/div>
10
90
5.0
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
50
nA
鈥?/div>
V
V
CE
=5.0 V
I
C
=100
碌
A
I
C
=100
碌
A
I
E
=100
碌
A
I
C
=10
碌
A
V
CE
=10 V,
T
A
=25擄C
I
R
V
F
鈥?/div>
鈥?/div>
6.0
鈥?/div>
1.2
1.0
20
0.1
1.5
1.2
鈥?/div>
10
碌
A
V
I
F
=20 mA
I
F
=1.0 mA
I
R
=10
碌
A
V
R
=6.0 V
T
A
=25擄C
Symbol
Min.
Typ.
Max.
Unit
Condition
I
F
=1.0 mA,
V
CE
=10 V
錚?/div>
2001 In鏗乶eon Technologies Corp. 鈥?Optoelectronics Division 鈥?San Jose, CA
www.in鏗乶eon.com/opto 鈥?1-888-In鏗乶eon (1-888-463-4636)
2鈥?04
March 1, 2000-00
IL201-1相關(guān)型號(hào)PDF文件下載
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型號(hào)
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英文版
PHOTOTRANSISTOR OPTOCOUPLER
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Optoelectronic
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