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IGB15N60T Datasheet

  • IGB15N60T

  • Low Loss IGBT in Trench and Fieldstop technology

  • 12頁

  • INFINEON   INFINEON

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上傳產(chǎn)品規(guī)格書

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TrenchStop Series
IGB15N60T
q
Low Loss IGBT in Trench and Fieldstop technology
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Very low
V
CE(sat)
1.5 V (typ.)
Maximum Junction Temperature 175 擄C
Short circuit withstand time 鈥?5碌s
Designed for :
- Frequency Converters
- Uninterrupted Power Supply
Trench and Fieldstop technology for 600 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- very high switching speed
- low
V
CE(sat)
Positive temperature coefficient in
V
CE(sat)
Low EMI
Low Gate Charge
Complete product spectrum and PSpice Models :
http://www.infineon.com/igbt/
V
CE
600V
I
C
15A
V
CE(sat),Tj=25擄C
1.5V
T
j,max
175擄C
Marking Code
G15T60
Package
TO-263
C
G
E
P-TO-263-3-2 (D虜-PAK)
(TO-263AB)
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Type
IGB15N60T
Ordering Code
Q67040S4720
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current, limited by
T
jmax
T
C
= 25擄C
T
C
= 100擄C
Pulsed collector current,
t
p
limited by
T
jmax
Turn off safe operating area (V
CE
鈮?/div>
600V,
T
j
鈮?/div>
175擄C)
Gate-emitter voltage
Short circuit withstand time
1)
V
GE
= 15V,
V
CC
鈮?/div>
400V,
T
j
鈮?/div>
150擄C
Power dissipation
T
C
= 25擄C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
P
tot
T
j
T
stg
-
130
-40...+175
-55...+175
260
W
擄C
I
Cpuls
-
V
GE
t
SC
Symbol
V
CE
I
C
30
15
45
45
鹵20
5
V
碌s
Value
600
Unit
V
A
1)
Allowed number of short circuits: <1000; time between short circuits: >1s.
1
Rev. 2.1 Dec-04
Power Semiconductors

IGB15N60T 產(chǎn)品屬性

  • IGB15N60T

  • 1,000

  • 分離式半導(dǎo)體產(chǎn)品

  • IGBT - 單路

  • TrenchStop™

  • 溝道

  • 600V

  • 2.05V @ 15V，15A

  • 30A

  • 130W

  • 標(biāo)準(zhǔn)型

  • 表面貼裝

  • TO-263-3，D²Pak（2 引線+接片），TO-263AB

  • PG-TO263-3-2

  • 帶卷 (TR)

  • IGB15N60TATMA1SP000054921

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