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IBM13N4644MCB-260T Datasheet

  • IBM13N4644MCB-260T

  • x64 SDRAM Module

  • 18頁

  • ETC

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Discontinued (4/1/00 - last order; 7/31/00 - last ship)
.
IBM13N4644MCB
IBM13N4734MCB
4M x 64/72 One-Bank Unbuffered SDRAM Module
Features
鈥?168-Pin Unbuffered 8-Byte Dual In-Line Memory
Module
鈥?4Mx64/72 Synchronous DRAM DIMM
鈥?Three speed sorts:
鈥?-260 and -360 for PC100 applications
鈥?-10 for 66MHz applications (typical)
鈥?Inputs and outputs are LVTTL (3.3V) compatible
鈥?Single 3.3V
鹵
0.3V Power Supply
鈥?Single Pulsed RAS interface
鈥?SDRAMs have 4 internal banks
鈥?Module has 1 bank
鈥?Fully Synchronous to positive Clock Edge
鈥?Data Mask for Byte Read/Write control
鈥?Auto Refresh (CBR) and Self Refresh
鈥?Automatic and controlled Precharge commands
鈥?Programmable Operation:
- CAS Latency: 2, 3
- Burst Type: Sequential or Interleave
- Burst Length: 1, 2, 4, 8, Full-Page (Full-
Page supports Sequential burst only)
- Operation: Burst Read and Write or Multiple
Burst Read with Single Write
鈥?Suspend Mode and Power Down Mode
鈥?12/8/2 Addressing (Row/Column/Bank)
鈥?4096 Refresh cycles distributed across 64ms
鈥?Serial Presence Detect
鈥?Card size: 5.25" x 1.000" x 0.106"
鈥?Gold contacts
鈥?SDRAMs in TSOP Type II Package
Description
IBM13N4644MCB / IBM13N4734MCB are unbuf-
fered 168-pin Synchronous DRAM Dual In-Line
Memory Modules (DIMMs) which are organized as
4Mx64 and 4Mx72 high-speed memory arrays. The
DIMMs use 4(4Mx64) or 5(4Mx72) 4Mx16 SDRAMs
in 400mil TSOP II packages. The DIMMs achieve
high-speed data transfer rates of up to 100MHz by
employing a prefetch/pipeline hybrid architecture
that supports the JEDEC 1N rule while allowing very
low burst power.
The -10 speed sort DIMMs comply with JEDEC
standards for 168-pin unbuffered SDRAM DIMMs.
The -360 speed sort DIMMs are compatible with the
Intel PC100 SDRAM unbuffered DIMM specification.
All control, address, and data input/output circuits
are synchronized with the positive edge of the exter-
nally supplied clock inputs.
All inputs are sampled at the positive edge of each
externally supplied clock (CK0, CK2). Internal oper-
ating modes are defined by combinations of RAS,
CAS, WE, S0/S2, DQMB, and CKE0 signals. A
command decoder initiates the necessary timings
for each operation. A 14-bit address bus accepts
address information in a row/column multiplexing
arrangement.
Prior to any Access operation, the CAS latency,
burst type, burst length, and Burst operation type
must be programmed into the DIMM by address
inputs A0-A9 during the Mode Register Set cycle.
The DIMM uses serial presence detects imple-
mented via a serial EEPROM using the two-pin IIC
protocol. The first 128 bytes of serial PD data are
used by the DIMM manufacturer. The last 128 bytes
are available to the customer.
All IBM 168-pin DIMMs provide a high-performance,
flexible 8-byte interface in a 5.25" long space-saving
footprint. Related products include both EDO DRAM
and SDRAM unbuffered DIMMs in both non-parity
x64 and ECC-Optimized x72 configurations.
Card Outline
(Front) 1
(Back) 85
10 11
94 95
40 41
124 125
84
168
19L7294.E93875A
8/99
漏IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 1 of 18

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