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IBM0418A81MLAB
IBM0418A41MLAB
Preliminary
IBM0436A81MLAB
IBM0436A41MLAB
8Mb (256Kx36 & 512x18) and 4Mb (128Kx36 & 256Kx18) SRAM
Features
鈥?8Mb: 256K x 36 or 512K x 18 organizations
4Mb: 128K x 36 or 256K x 18 organizations
鈥?0.25 Micron CMOS technology
鈥?Synchronous Pipeline Mode of Operation with
Self-Timed Late Write
鈥?Differential Clocks
鈥?+3.3V Power Supply, Ground, 2.0V V
DDQ
鈥?2.0V LVTTL Input and Output levels
鈥?Registered Addresses, Write Enables, Synchro-
nous Select, and Data Ins
鈥?Registered Outputs
鈥?40 Ohm Drivers
鈥?Common I/O
鈥?Asynchronous Output Enable
鈥?Synchronous Power Down Input
鈥?Boundary Scan using limited set of JTAG
1149.1 functions
鈥?Byte Write Capability and Global Write Enable
鈥?7 x 17 Bump Ball Grid Array Package with
SRAM JEDEC Standard Pinout and Boundary
SCAN Order
Description
The 4Mb and 8Mb SRAMs鈥擨BM0436A41MLAB,
IBM0418A41MLAB, IBM0418A81MLAB, and
IBM0436A81MLAB鈥攁re Synchronous Pipeline
Mode, high-performance CMOS Static Random
Access Memories that are versatile, have wide I/O,
and can achieve 3.0ns cycle times. Differential K
clocks are used to initiate the read/write operation
and all internal operations are self-timed. At the ris-
ing edge of the K clock, all Addresses, Write-
Enables, Sync Select, and Data Ins are registered
internally. Data Outs are updated from output regis-
ters off the next rising edge of the K clock. An inter-
nal Write buffer allows write data to follow one cycle
after addresses and controls. The device is oper-
ated with a single +3.3V power supply and is com-
patible with 2.0V LVTTL I/O interfaces.
crrL3318.01
12/00
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Use is further subject to the provisions at the end of this document.
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