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HYS64V64220GBDL-8-D Datasheet

  • HYS64V64220GBDL-8-D

  • 144 pin SO-DIMM SDRAM Modules

  • 13頁

  • INFINEON   INFINEON

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144 pin SO-DIMM SDRAM Modules
HYS64V64220GBDL-7/7.5/8-D
512 MB PC100 / PC133
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u144 Pin Eight Byte Small Outline Dual-In-Line Synchronous DRAM Modules
for notebook applications
Two bank 64M x 64 non-parity module organisation
suitable for use in PC100 and PC133 applications
Performance:
-7
PC133
2-2-2
f
CK
t
AC
Clock frequency (max.)
Clock access time
CAS latency = 2 & 3
133
5.4
-7.5
PC133
3-3-3
133
5.4
-8
PC100
2-2-2
100
6
Units
MHz
ns
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Single +3.3V(鹵 0.3V ) power supply
Programmable CAS Latency, Burst Length and Wrap Sequence
(Sequential & Interleave)
Auto Refresh (CBR) and Self Refresh
Decoupling capacitors mounted on substrate
All inputs, outputs are LVTTL compatible
Serial Presence Detect with E
2
PROM
Uses sixteen 256Mbit SDRAM (32Mb x8 ) components in P-TFBGA packages
8196 refresh cycles every 64 ms
Gold contact pad, JEDEC MO-190 outline dimensions
This module family is fully pin and functional compatible
with the latest INTEL SO-DIMM specification
Importante Notice:
This SO-DIMM module is based on 256Mbit SDRAM technology and can be
used in applications only, where 256Mbit addressing is supported.
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INFINEON Technologies
1
2002-08-06

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