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HYS64V4220GU-10 Datasheet

  • HYS64V4220GU-10

  • 3.3V 2M x 64/72-Bit 1 BANK SDRAM Module 3.3V 4M x 64/72-Bit ...

  • 17頁(yè)

  • INFINEON   INFINEON

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3.3V 2M x 64/72-Bit 1 BANK SDRAM Module
3.3V 4M x 64/72-Bit 2 BANK SDRAM Module
168 pin unbuffered DIMM Modules
HYS64/72V2200GU-8/-10
HYS64/72V4220GU-8/-10
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168 Pin PC100 and PC66 compatible unbuffered 8 Byte Dual-In-Line SDRAM Modules
for PC main memory applications
1 bank 2M x 64, 2M x 72 and 2 bank 4M x 64, 4M x 72 organisation
Optimized for byte-write non-parity or ECC applications
JEDEC standard Synchronous DRAMs (SDRAM)
Fully PC board layout compatible to INTEL鈥?Rev. 1.0 module specification
s
SDRAM Performance:
-8
f
CK
t
AC
Clock frequency (max.)
Clock access time
100
6
-8-3
100
6
-10
66
8
Units
MHz
ns
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Programmed Latencies :
Product Speed
-8
-8-3
-10
PC100
PC100
PC66
CL
2
3
2
tRCD
2
2
2
tRP
2
3
2
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Single +3.3V(鹵 0.3V ) power supply
Programmable CAS Latency, Burst Length and Wrap Sequence
(Sequential & Interleave)
Auto Refresh (CBR) and Self Refresh
Decoupling capacitors mounted on substrate
All inputs, outputs are LVTTL compatible
Serial Presence Detect with E
2
PROM
Utilizes 2M x 8 SDRAMs in TSOPII-44 packages
4096 refresh cycles every 64 ms
133,35 mm x 31.75 mm x 4,00 mm card size with gold contact pads
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Semiconductor Group
1
6.98

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