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HYR163249G-840 Datasheet

  • HYR163249G-840

  • Direct RDRAM RIMM Modules (with 288 Mbit RDRAMs)

  • 14頁

  • INFINEON   INFINEON

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HYR16xx49G
64MB & 128MB Rambus RIMM Modules
Direct RDRAM RIMM Modules
(with 288 Mbit RDRAMs)
Overview
The Direct Rambus
鈩?/div>
RIMM
鈩?/div>
module is a general purpose high-performance memory subsystem
suitable for use in a broad range of applications including computer memory, personal computers,
workstations, and other applications where high bandwidth and low latency are required.
The Direct Rambus RIMM module consists of 288 Mbit Direct Rambus DRAM (Direct RDRAM鈩?
devices. These are extremely high-speed CMOS DRAMs organized as 16M words by 18 bits. The
use of Rambus Signaling Level (RSL) technology permits 600 MHz to 800 MHz transfer rates while
using conventional system and board design technologies. Direct RDRAM devices are capable of
sustained data transfers at 1.25 ns per two bytes (10 ns per sixteen bytes).
The RDRAM architecture enables the highest sustained bandwidth for multiple, simultaneous,
randomly addressed, memory transactions. The separate control and data buses with independent
row and column control yield over 95% bus efficiency. The RDRAM's 32-bank architecture supports
up to four simultaneous transactions per device.
Form Factor
These family of 64MByte and 128MByte Rambus RIMM modules are offered in a 184-pad 1 mm
edge connector pad pitch form factor suitable for 184 contact RIMM connectors. The RIMM module
is suitable for desktop and other system applications. The next figure shows an eight device
Rambus RIMM module without heat spreader.
Features
鈥?64 MByte and 128 MByte non-ECC versions
鈥?High speed 800 & 600 MHz RDRAM storage
鈥?184 edge connector pads with 1 mm pad
spacing
鈥?Maximum module PCB size:
133.5 mm
脳
31.75 mm
脳
1.37 mm
(5.25鈥?/div>
脳
1.25鈥?/div>
脳
0.05鈥?
鈥?Each RDRAM has 32 banks, for a total of 128
or 64 banks on each 128 MB or 64 MB
module respectively.
,
鈥?Gold plated edge connector pad contacts
鈥?Serial Presence Detect (SPD) support
鈥?Operates from a 2.5 V supply (鹵 5%)
鈥?Low power and powerdown self refresh
modes
鈥?Separate Row and Column buses for higher
efficiency
INFINEON Technologies
1
9.01

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