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HYMD264M646ALF8 Datasheet

  • HYMD264M646ALF8

  • 64Mx64|2.5V|J/M/K/H/L|x8|DDR SDRAM - SO DIMM 512MB

  • 19頁(yè)

  • ETC

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64Mx64 bits
Unbuffered DDR SO-DIMM
HYMD264M646A(L)F8-J/M/K/H/L
DESCRIPTION
Hynix HYMD264M646A(L)F8-J/M/K/H/L series is unbuffered 200-pin double data rate Synchronous DRAM Small Out-
line Dual In-Line Memory Modules (SO-DIMMs) which are organized as 64Mx64 high-speed memory arrays. Hynix
HYMD264M646A(L)F8-J/M/K/H/L series consists of sixteen 32Mx8 DDR SDRAM in FBGA packages on a 200pin
glass-epoxy substrate. Hynix HYMD264M646A(L)F8-J/M/K/H/L series provide a high performance 8-byte interface in
67.60mmX 31.75mm form factor of industry standard. It is suitable for easy interchange and addition.
Hynix HYMD232M646A(L)F8-J/M/K/H/L series is designed for high speed of up to 166MHz and offers fully synchro-
nous operations referenced to both rising and falling edges of differential clock inputs. While all addresses and control
inputs are latched on the rising edges of the clock, Data, Data strobes and Write data masks inputs are sampled on
both rising and falling edges of it. The data paths are internally pipelined and 2-bit prefetched to achieve very high
bandwidth. All input and output voltage levels are compatible with SSTL_2. High speed frequencies, programmable
latencies and burst lengths allow variety of device operation in high performance memory system.
Hynix HYMD264M646A(L)F8-J/M/K/H/L series incorporates SPD(serial presence detect). Serial presence detect func-
tion is implemented via a serial 2,048-bit EEPROM. The first 128 bytes of serial PD data are programmed by Hynix to
identify DIMM type, capacity and other the information of DIMM and the last 128 bytes are available to the customer.
FEATURES
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512MB (64M x 64) Unbuffered DDR SO-DIMM
based on 32Mx8 DDR SDRAM
200-pin small outline dual in-line memory module
(SO-DIMM)
2.5V +/- 0.2V VDD and VDDQ Power supply
All inputs and outputs are compatible with SSTL_2
interface
Fully differential clock operations (CK & /CK) with
100MHz/125MHz/133MHz/166MHz
All addresses and control inputs except Data, Data
strobes and Data masks latched on the rising edges
of the clock
Data(DQ), Data strobes and Write masks latched on
both rising and falling edges of the clock
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Data inputs on DQS centers when write (centered
DQ)
Data strobes synchronized with output data for read
and input data for write
Programmable CAS Latency 2 / 2.5 supported
Programmable Burst Length 2 / 4 / 8 with both
sequential and interleave mode
tRAS Lock-out function supported
Internal four bank operations with single pulsed RAS
Auto refresh and self refresh supported
8192 refresh cycles / 64ms
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ORDERING INFORMATION
Part No.
HYMD264M646A(L)F8-J
HYMD264M646A(L)F8-M
HYMD264M646A(L)F8-K
HYMD264M646A(L)F8-H
HYMD264M646A(L)F8-L
V
DD
=2.5V
V
DDQ
=2.5V
Power Supply
Clock Frequency
166MHz (*DDR333)
133MHz (*DDR266:2-2-2)
133MHz (*DDR266A)
133MHz (*DDR266B)
100MHz (*DDR200)
Interface
Form Factor
SSTL_2
200pin Unbuffered SO-DIMM
67.6mm x 31.75mm x 1mm
* JEDEC Defined Specifications compliant
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsibility for use of circuits described. No patent licenses are implied.
Rev. 0.2/Oct. 02
1

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