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HYM72V8010GS-50 Datasheet

  • HYM72V8010GS-50

  • 8M x 72-Bit Dynamic RAM Module

  • 11頁

  • INFINEON   INFINEON

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8M
脳
72-Bit Dynamic RAM Module
(ECC - Module)
HYM 72V8000GS-50/-60
HYM 72V8010GS-50/-60
Preliminary Information
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8 388 608 words by 72-bit ECC - mode, one bank organization
Fast access and cycle time
50 ns access time
90 ns cycle time (-50 version)
60 ns access time
110 ns cycle time (-60 version)
Fast page mode capability with
35 ns cycle time (-50 version)
40 ns cycle time (-60 version)
Single + 3.3V
鹵
0.3 V supply
Low power dissipation
max. 4536 mW active (-50 version)
max. 3888 mW active (-60 version)
CMOS 鈥?108 mW standby
TTL
鈥?180 mW standby
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CAS-before-RAS refresh, RAS-only-refresh
9 decoupling capacitors mounted on substrate
All inputs, outputs and clock fully LVTTL & LVCMOS compatible
4 Byte interleave enabled, Dual Address inputs (A0/B0)
Buffered inputs excepts RAS and DQ
168 pin, dual read-out, Single in-Line Memory Module
Utilizes nine 8M
脳
8 -DRAMs and four BiCMOS 8-bit buffers/line drivers VT244A
Two versions: HYM 72V8010GS with SOJ-components ( 9 mm module thickness)
HYM 72V8000GS with TSOPII-components ( 4 mm module thickness)
4048 refresh cycles / 64 ms with 12 / 11 addressing
Gold contact pad
double sided module with 25.35 mm (1000 mil) height
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Semiconductor Group
1
115.95

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