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HYM72V64M636BF8 Datasheet

  • HYM72V64M636BF8

  • 64Mx64|3.3V|K/H|x8|SDR SDRAM - SO DIMM 512MB

  • 14頁

  • ETC

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64Mx64bits
PC133 SDRAM SO DIMM
based on 32Mx8 SDRAM with LVTTL, 4 banks & 8K Refresh
HYM72V64M636B(L)F
Series
DESCRIPTION
Preliminary
The HYM72V64M636B(L)F8 is 64Mx64bits Synchronous DRAM Modules. The modules are composed of sixteen 32Mx8bits CMOS
Synchronous DRAMs in FBGA package, one 2Kbit EEPROM in 8pin TSOP package on a 144pin glass-epoxy printed circuit board.
One 0.1uF decoupling capacitor is mounted on the printed circuit board in parallel for each SDRAM.
The HYM72V64M636B(L)F8 is Small Outline Dual In-line Memory Modules suitable for easy interchange and addition of 512Mbytes
memory. The HYM72V64M636B(L)F8 Series are fully synchronous operation referenced to the positive edge of the clock . All inputs
and outputs are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve very high band-
width.
FEATURES
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PC133MHz support
144pin SDRAM Unbuffered DIMM
Serial Presence Detect with EEPROM
1.181鈥?Height PCB with double sided components
Single 3.3鹵0.3V power supply
All device pins are compatible with LVTTL interface
Data mask function by DQM
SDRAM internal banks : four banks
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Module bank : two physical bank
Auto refresh and self refresh
8192 refresh cycles / 64ms
Programmable Burst Length and Burst Type
- 1, 2, 4 or 8 or Full page for Sequential Burst
- 1, 2, 4 or 8 for Interleave Burst
Programmable CAS Latency ; 2, 3 Clocks
ORDERING INFORMATION
Part No.
HYM72V64M636BF8
-K
HYM72V64M636BF8
-H
HYM72V64M636BLF8
-K
HYM72V64M636BLF8
-H
Clock
Frequency
133MHz
133MHz
133MHz
133MHz
4 Banks
8K
Low Power
Internal
Bank
Ref.
Power
Normal
SDRAM
Package
Plating
54ball FBGA
Gold
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use
of circuits described. No patent licenses are implied.
Rev. 0.1/Apr. 02
1

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