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HYM72V32M636LT8 Datasheet

  • HYM72V32M636LT8

  • 32Mx64|3.3V|H|x8|SDR SDRAM - SO DIMM 256MB

  • 174.23KB

  • 13頁(yè)

  • ETC

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32Mx64bits
PC133 SDRAM SO DIMM
based on 32Mx8 SDRAM with LVTTL, 4 banks & 8K Refresh
HYM72V32M636T8 Series
DESCRIPTION
The HYM72V32M636T8 Series are 32Mx64bits Synchronous DRAM Modules. The modules are composed of eight 32Mx8bits CMOS
Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 144pin glass-epoxy printed
circuit board. One 0.22uF and one 0.0022uF decoupling capacitors per each SDRAM are mounted on the PCB.
The HYM72V32M636T8 Series are Dual In-line Memory Modules suitable for easy interchange and addition of 256Mbytes memory.
The HYM72V32M636T8 Series are fully synchronous operation referenced to the positive edge of the clock . All inputs and outputs
are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve very high bandwidth.
FEATURES
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PC133/PC100MHz support
144pin SDRAM SO DIMM
Serial Presence Detect with EEPROM
1.155鈥?(29.34mm) Height PCB with single sided
components
Single 3.3鹵0.3V power supply
- 1, 2, 4 or 8 or Full page for Sequential Burst
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All device pins are compatible with LVTTL interface
- 1, 2, 4 or 8 for Interleave Burst
Data mask function by DQM
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Programmable CAS Latency ; 2, 3 Clocks
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SDRAM internal banks : four banks
Module bank : one physical bank
Auto refresh and self refresh
8192 refresh cycles / 64ms
Programmable Burst Length and Burst Type
ORDERING INFORMATION
Part No.
HYM72V32M636T8
-H
HYM72V32M636T8
-H
Clock
Frequency
133MHz
4 Banks
133MHz
8K
Low Power
Internal
Bank
Ref.
Power
Normal
SDRAM
Package
TSOP-II
Plating
Gold
This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume any responsibility for use of
circuits described. No patent licenses are implied.
Rev. 0.1/Dec.2000

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