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HYM72V16M656HLT6 Datasheet

  • HYM72V16M656HLT6

  • 16Mx64|3.3V|P/S|x4|SDR SDRAM - SO DIMM 128MB

  • 256.89KB

  • 14頁(yè)

  • ETC

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16Mx64 bits
PC100 SDRAM SO DIMM
based on 16Mx16 SDRAM with LVTTL, 4 banks & 8K Refresh
HYM72V16M656H(L)T6 Series
DESCRIPTION
The HYM72V16M656H(L)T6 -Series are high speed 3.3-Volt Synchronous DRAM Modules composed of four 16Mx16 bit
Synchronous DRAMs in 54-pin TSOPII and 8-pin TSSOP 2K bit EEPROM on a 144-pin Zig Zag Dual pin glass-epoxy
printed circuit board. Three 0.1uF decoupling capacitors per each SDRAM are mounted on the module.
The HYM72V16M656H(L)T6 -Series are gold plated socket type Dual In-line Memory Modules suitable for easy inter-
change and addition of 128M bytes memory. All inputs and outputs are synchronized with the rising edge of the clock
input. The data paths are internally pipelined to achieve very high bandwidth.
FEATURES
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PC100 support
144pin SDRAM SO DIMM
Serial Presence Detect with EEPROM
1.0鈥?(25.4mm) Height PCB with double sided compo-
nents
Single 3.3鹵0.3V power supply
- 1, 2, 4 or 8 or Full page for Sequential Burst
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All device pins are compatible with LVTTL interface
- 1, 2, 4 or 8 for Interleave Burst
Data mask function by DQM
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Programmable CAS Latency ; 2, 3 Clocks
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SDRAM internal banks : four banks
Module bank : one physical bank
Auto refresh and self refresh
8192 refresh cycles / 64ms
Programmable Burst Length and Burst Type
ORDERING INFORMATION
Part No.
HYM72V16M656HT6-P
HYM72V16M656HT6-S
HYM72V16M656HLT6-P
HYM72V16M656HLT6-S
Clock
Frequency
100MHz
100MHz
100MHz
100MHz
Internal
Bank
Ref.
Power
Normal
SDRAM
Package
Plating
4 Banks
8K
Low Power
TSOP-II
Gold
This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc. does not assume any responsibility for
use of circuits described. No patent licenses are implied.
Rev. 0.1/Nov. 01

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