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HYM72V1610GS-50 Datasheet

  • HYM72V1610GS-50

  • 16M x 72-Bit Dynamic RAM Module

  • 22頁

  • INFINEON   INFINEON

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16M
脳
72-Bit Dynamic RAM Module
(ECC - Module )
HYM 72V1600GS-50/-60
HYM 72V1610GS-50/-60
Preliminary Information
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16 777 216 words by 72-bit ECC - mode organization
Fast access and cycle time
50 ns access time
90 ns cycle time (-50 version)
60 ns access time
110 ns cycle time (-60 version)
Fast page mode capability with
35 ns cycle time (-50 version)
40 ns cycle time (-60 version)
Single + 3.3V (鹵 0.3V) supply
Low power dissipation
max. 6480 mW active (-50 version)
max. 5832 mW active (-60 version)
CMOS 鈥?108 mW standby
LVTTL 鈥?180 mW standby
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CAS-before-RAS refresh, RAS-only-refresh
18 decoupling capacitors mounted on substrate
All inputs, outputs and clock fully LVTTL & LVCMOS compatible
4 Byte interleave enabled, Dual Address inputs (A0/B0)
Buffered inputs excepts RAS and DQ
168 pin, dual read-out, Single in-Line Memory Module
Utilizes eighteen 16M
脳
4 -DRAMs and four BiCMOS 8-bit buffers/line drivers VT244A
Two versions : HYM 72V1600GS with TSOPII-components (4 mm thickness)
HYM 72V1610GS with SOJ-components
(9 mm thickness)
8192 refresh cycles / 128 ms with 13 / 11 addressing
Gold contact pad
double sided module with 38.1 mm (1500 mil) height
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Semiconductor Group
1
11.95

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