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HYM72V12C756BS4-S Datasheet

  • HYM72V12C756BS4-S

  • SDRAM|128MX72|CMOS|DIMM|168PIN|PLASTIC

  • 14頁

  • ETC

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128Mx72 bits
PC100 SDRAM Registered DIMM
with PLL, based on 64Mx4 SDRAM with LVTTL, 4 banks & 8K Refresh
HYM72V12C756B(L)S4 Series
DESCRIPTION
The HYM72V12C756B(L)S4 Series are 128Mx72bits ECC Synchronous DRAM Modules. The modules are composed of thirty six
64Mx4bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II stack package, one 2Kbit EEPROM in 8pin TSSOP package on a
168pin glass-epoxy printed circuit board. One 0.22uF and one 0.0022uF decoupling capacitors per each SDRAM are mounted on the
PCB.
The HYM72V12C756B(L)S4 Series are Dual In-line Memory Modules suitable for easy interchange and addition of 1Gbytes memory.
The HYM72V12C756B(L)S4 Series are fully synchronous operation referenced to the positive edge of the clock . All inputs and out-
puts are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve very high bandwidth.
FEATURES
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PC100MHz support
168pin SDRAM Registered DIMM
Serial Presence Detect with EEPROM
1.7鈥?(43.18mm) Height PCB with double sided com-
ponents
Single 3.3鹵0.3V power supply
- 1, 2, 4 or 8 or Full page for Sequential Burst
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All device pins are compatible with LVTTL interface
- 1, 2, 4 or 8 for Interleave Burst
Data mask function by DQM
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Programmable CAS Latency ; 2, 3 Clocks
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SDRAM internal banks : four banks
Module bank : two physical banks
Auto refresh and self refresh
8192 refresh cycles / 64ms
Programmable Burst Length and Burst Type
ORDERING INFORMATION
Part No.
HYM72V12C756BS4-P
HYM72V12C756BS4-S
HYM72V12C756BLS4-P
HYM72V12C756BLS4-S
Clock
Frequency
100MHz
100MHz
100MHz
100MHz
Internal
Bank
Ref.
Power
Normal
SDRAM
Package
Plating
4 Banks
8K
Low Power
TSOP-II
Gold
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use
of circuits described. No patent licenses are implied.
Rev. 0.3/Jan. 02
1

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