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HYM71V8M755HCLFU6 Datasheet

  • HYM71V8M755HCLFU6

  • 8Mx72|3.3V|8/P/S|x5|SDR SDRAM - SO DIMM 64MB

  • 204.10KB

  • 14頁

  • ETC

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8Mx72 bits
PC100 SDRAM Unbuffered MicroDIMM
based on 8Mx16 SDRAM with LVTTL, 4 banks & 4K Refresh
HYM71V8M755HC(L)FU6 Series
DESCRIPTION
The HYM71V8M755HCTU6 Series are 8Mx72bits Synchronous DRAM Modules. The modules are composed of five
8Mx16bits CMOS Synchronous DRAMs in 54ball FBGA package, one 2Kbit EEPROM in 8pin TSSOP package on a 144pin
glass-epoxy printed circuit board.
The HYM71V8M755HCFU6 Series are Dual In-line Memory Modules suitable for easy interchange and addition of 64Mbytes
memory. The HYM71V8M755HCFU6 Series are fully synchronous operation referenced to the positive edge of the clock . All
inputs and outputs are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve
very high bandwidth.
FEATURES
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PC100MHz support
144pin SDRAM Micro SO DIMM
Serial Presence Detect with EEPROM
1.00鈥?(25.40mm) Height PCB with double sided compo-
nents
Single 3.3鹵0.3V power supply
- 1, 2, 4 or 8 or Full page for Sequential Burst
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All device pins are compatible with LVTTL interface
- 1, 2, 4 or 8 for Interleave Burst
Data mask function by DQM
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Programmable CAS Latency ; 2, 3 Clocks
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SDRAM internal banks : four banks
Module bank : one physical bank
Auto refresh and self refresh
4096 refresh cycles / 64ms
Programmable Burst Length and Burst Type
ORDERING INFORMATION
Part No.
HYM71V8M755HCFU6-8
HYM71V8M755HCFU6-P
HYM71V8M755HCFU6-S
HYM71V8M755HCLFU6-8
HYM71V8M755HCLFU6-P
HYM71V8M755HCLFU6-S
Clock
Frequency
125MHz
100MHz
100MHz
125MHz
100MHz
100MHz
Internal
Bank
Ref.
Power
SDRAM
Package
Plating
Normal
4 Banks
4K
Low Power
FBGA
Gold
This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc. does not assume any re-
sponsibility for use of circuits described. No patent licenses are implied.
Rev. 0.1/May. 02
1

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