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HYM71V16M755HCT6 Datasheet

  • HYM71V16M755HCT6

  • 16Mx72|3.3V|8/P/S|x10|SDR SDRAM - SO DIMM 128MB

  • 14頁

  • ETC

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16Mx72bits
PC100 SDRAM SO DIMM
based on 8Mx16 SDRAM with LVTTL, 4 banks & 4K Refresh
HYM71V16M755HC(L)T6 Series
DESCRIPTION
The HYM71V16M755HC(L)T6 Series are 16Mx72bits Synchronous DRAM Modules. The modules are composed of ten
8Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a
144pin glass-epoxy printed circuit board.
The HYM71V16M755HC(L)T6 Series are Dual In-line Memory Modules suitable for easy interchange and addition of
128Mbytes memory. The HYM71V16M755HC(L)T6 Series are fully synchronous operation referenced to the positive edge of
the clock . All inputs and outputs are synchronized with the rising edge of the clock input. The data paths are internally pipe-
lined to achieve very high bandwidth.
FEATURES
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PC100MHz support
144pin SDRAM SO DIMM
Serial Presence Detect with EEPROM
1.25鈥?Height PCB with single sided components
Single 3.3鹵0.3V power supply
All device pins are compatible with LVTTL interface
Data mask function by DQM
SDRAM internal banks : four banks
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Module bank : one physical bank
Auto refresh and self refresh
4096 refresh cycles / 64ms
Programmable Burst Length and Burst Type
- 1, 2, 4 or 8 or Full page for Sequential Burst
- 1, 2, 4 or 8 for Interleave Burst
Programmable CAS Latency ; 2, 3 Clocks
ORDERING INFORMATION
Part No.
HYM71V16M755HCT6-8
HYM71V16M755HCT6-P
HYM71V16M755HCT6-S
HYM71V16M755HCLT6-8
HYM71V16M755HCLT6-P
HYM71V16M755HCLT6-S
Clock
Frequency
125MHz
100MHz
100MHz
125MHz
100MHz
100MHz
Internal
Bank
Ref.
Power
SDRAM
Package
Plating
Normal
4 Banks
4K
Low Power
TSOP-II
Gold
This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc. does not assume any re-
sponsibility for use of circuits described. No patent licenses are implied.
Rev. 0.1/May. 02
1

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