based on 16Mx8 SDRAM with LVTTL, 4 banks & 4K Refresh
HYM71V16M655AT8 Series
DESCRIPTION
The Hynix HYM71V16M655AT8 Series are 16Mx64bits Synchronous DRAM Modules. The modules are composed of eight 16Mx8bits
CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 144pin glass-epoxy
printed circuit board. One 0.22uF and one 0.0022uF decoupling capacitors per each SDRAM are mounted on the PCB.
The Hynix HYM71V16M655AT8 Series are Dual In-line Memory Modules suitable for easy interchange and addition of 128Mbytes
memory. The Hynix HYM71V16M655AT8 Series are fully synchronous operation referenced to the positive edge of the clock . All
inputs and outputs are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve very high
bandwidth.
FEATURES
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
PC100MHz support
144pin SDRAM SO DIMM
Serial Presence Detect with EEPROM
1.155鈥?(29.34mm) Height PCB with single sided
components
Single 3.3鹵0.3V power supply
- 1, 2, 4 or 8 or Full page for Sequential Burst
鈥?/div>
鈥?/div>
All device pins are compatible with LVTTL interface
- 1, 2, 4 or 8 for Interleave Burst
Data mask function by DQM
鈥?/div>
Programmable CAS Latency ; 2, 3 Clocks
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
SDRAM internal banks : four banks
Module bank : one physical bank
Auto refresh and self refresh
4096 refresh cycles / 64ms
Programmable Burst Length and Burst Type
ORDERING INFORMATION
Part No.
HYM71V16M655AT8-8
HYM71V16M655AT8-P
HYM71V16M655AT8-S
HYM71V16M655ALT8-8
HYM71V16M655ALT8-P
HYM71V16M655ALT8-S
Clock
Frequency
125MHz
100MHz
100MHz
Internal
Bank
Ref.
Power
SDRAM
Package
Plating
Normal
4 Banks
4K
Low Power
TSOP-II
Gold
125MHz
100MHz
100MHz
This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume any responsibility for use of
circuits described. No patent licenses are implied.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
