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HYM71V16635HCLT8P-H Datasheet

  • HYM71V16635HCLT8P-H

  • SDRAM|16MX64|CMOS|DIMM|168PIN|PLASTIC

  • 299.26KB

  • 14頁

  • ETC

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16Mx64bits
PC133 SDRAM Unbuffered DIMM
based on 16Mx8 SDRAM with LVTTL, 4 banks & 4K Refresh
HYM71V16635HCT8P Series
DESCRIPTION
The Hynix HYM71V16635HCT8P Series are 16Mx64bits Synchronous DRAM Modules. The modules are composed of eight
16Mx8bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin
glass-epoxy printed circuit board. One 0.22uF and one 0.0022uF decoupling capacitors per each SDRAM are mounted on the PCB.
The Hynix HYM71V16635HCT8P Series are Dual In-line Memory Modules suitable for easy interchange and addition of 128Mbytes
memory. The Hynix HYM71V16635HCT8P Series are fully synchronous operation referenced to the positive edge of the clock . All
inputs and outputs are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve very high
bandwidth.
FEATURES
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PC133/PC100MHz support
168pin SDRAM Unbuffered DIMM
Serial Presence Detect with EEPROM
1.15鈥?Height PCB with single sided components
Single 3.3鹵0.3V power supply
All device pins are compatible with LVTTL interface
Data mask function by DQM
SDRAM internal banks : four banks
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Module bank : one physical bank
Auto refresh and self refresh
4096 refresh cycles / 64ms
Programmable Burst Length and Burst Type
- 1, 2, 4 or 8 or Full page for Sequential Burst
- 1, 2, 4 or 8 for Interleave Burst
Programmable CAS Latency ; 2, 3 Clocks
ORDERING INFORMATION
Part No.
HYM71V16635HCT8P-K
HYM71V16635HCT8P-H
HYM71V16635HCLT8P-K
HYM71V16635HCLT8P-H
133MHz
4 Banks
4K
Low Power
Clock
Frequency
Internal
Bank
Ref.
Power
Normal
SDRAM
Package
Plating
TSOP-II
Gold
This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits de-
scribed. No patent licenses are implied.
Rev. 1.0/Mar. 02
2

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