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HYM368025GS-60 Datasheet

  • HYM368025GS-60

  • 8M x 36-Bit EDO - DRAM Module

  • 10頁

  • INFINEON   INFINEON

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8M x 36-Bit EDO - DRAM Module
HYM 368025S/GS-50/-60
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SIMM modules with 8 388 608 words by 36-bit organization in two banks
for PC main memory applications
Fast access and cycle time
50 ns access time
84 ns cycle time (-50 version)
60 ns access time
104 ns cycle time (-60 version)
Hyper Page Mode (EDO) capability
20 ns cycle time (-50 version)
25 ns cycle time (-60 version)
Single + 5 V (鹵 10 %) supply
Low power dissipation
max. 6820 mW active (-50 version)
max. 6160 mW active (-60 version)
CMOS 鈥?132 mW standby
TTL
鈥?64 mW standby
CAS-before-RAS refresh
RAS-only-refresh
Hidden-refresh
Decoupling capacitors mounted on substrate
All inputs, outputs and clocks fully TTL compatible
72 pin Single in-Line Memory Module (L-SIM-72-14) with 31.75 mm height
Utilizes sixteen 4Mx4-EDO-DRAMs and eight 4M x 1 EDO-DRAMs
in 300 mil wide SOJ packages
2048 refresh cycles / 32 ms
Optimized for use in byte-write parity applications
Tin-Lead contact pads (S- version)
Gold contact pads (GS - version)
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Semiconductor Group
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4.97

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