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1 048 576 words by 32-bit organization
(alternative 2 097 152 words by 16-bit)
Fast access and cycle time
50 ns access time
90 ns cycle time (-50 version)
60 ns access time
110 ns cycle time (-60 version)
Fast page mode capability with
35 ns cycle time (-50 version)
40 ns cycle time (-60 version)
Single + 5 V (鹵 10 %) supply
Low power dissipation
max 2200 mW active (-50 version)
max. 1980 mW active (-60 version)
CMOS 鈥?11 mW standby
TTL
鈥?22 mW standby
CAS-before-RAS refresh, RAS-only-refresh, Hidden refresh
2 decoupling capacitors mounted on substrate
All inputs, outputs and clock fully TTL compatible
72 pin Single in-Line Memory Module
Utilizes two 1M
脳
16 -DRAMs in SOJ-42 packages
1024 refresh cycles/16 ms
Optimized for use in byte-write non-parity applications
Tin-Lead contact pads HYM 321000S
Gold-Lead contact pads HYM 321000GS
single sided module with 20.32 mm (800 mil) height
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Semiconductor Group
1
12.95
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HYM321000GS-60相關(guān)型號(hào)PDF文件下載
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英文版
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