鈥?/div>
7.2 mW standby (TTL)
3.24 mW standby (MOS)
720
碌A(chǔ)
standby for L-version
Read, write, read-modify-write, CAS-before-RAS refresh (CBR),
RAS-only refresh, hidden refresh and Self Refresh (L-version only
2 CAS / 1 WE byte control
8192 refresh cycles/128 ms , 13 R/ 9C addresses (HYB 3164165AT)
4096 refresh cycles/ 64 ms , 12 R/ 10C addresses (HYB 3165165AT)
2048 refresh cycles/ 32 ms , 11 R/ 11C addresses (HYB 3166165AT)
256ms refresh period for L-versions
Plastic Package:
P-TSOPII-50 400 mil
Semiconductor Group
1
6.97