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Single + 3.3 V (鹵 0.3V) power supply
Low power dissipation:
max. 306 active mW ( HYB 3164805BJ/BT(L)-40)
max. 252 active mW ( HYB 3164805BJ/BT(L)-50)
max. 216 active mW ( HYB 3164805BJ/BT(L)-60)
max. 486 active mW ( HYB 3165805BJ/BT(L)-40)
max. 396 active mW ( HYB 3165805BJ/BT(L)-50)
max. 324 active mW ( HYB 3165805BJ/BT(L)-60)
7.2 mW standby (LVTTL)
3.6 mW standby (LVMOS)
720
碌A(chǔ)
standby for L-version
Read, write, read-modify-write, CAS-before-RAS refresh (CBR),
RAS-only refresh, hidden refresh
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Self refresh (L-version only)
8192 refresh cycles/128 ms , 13 R/ 10C addresses (HYB 3164805BJ/BT)
4096 refresh cycles/ 64 ms , 12 R/ 11C addresses (HYB 3165805BJ/BT)
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128 msec refresh period for L-versions
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Plastic Package: P-SOJ-32-1
400 mil
HYB 3164(5)400BJ
P-TSOPII-32-1 400 mil
HYB 3164(5)400BT(L)
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Semiconductor Group
1
12.97
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