鈥?/div>
4 194 304 words by 16-bit organization
0 to 70 藲C operating temperature
Fast access and cycle time
RAS access time:
50 ns (-50 version)
60 ns (-60 version)
Cycle time:
84 ns (-50 version)
104 ns (-60 version)
CAS access time:
13 ns ( -50 version)
15 ns ( -60 version)
Hyper page mode (EDO) cycle time
20 ns (-50 version)
25 ns (-60 version)
Single + 3.3 V (鹵 0.3V) power supply
Low power dissipation
max. 396 active mW ( HYB 3164165T(L)-50)
max. 360 active mW ( HYB 3164165T(L)-60)
max. 504 active mW ( HYB 3165165T(L)-50)
max. 432 active mW ( HYB 3165165T(L)-60)
7.2 mW standby (TTL)
720 W standby (MOS)
14.4 mW Self Refresh (L-version only)
Read, write, read-modify-write, CAS-before-RAS refresh (CBR),
RAS-only refresh, hidden refresh and self refresh modes
Hyper page mode (EDO) capability
2 CAS / 1 WE byte control
8192 refresh cycles/128 ms , 13 R/ 9C addresses (HYB 3164165T(L))
4096 refresh cycles/ 64 ms , 12 R/ 10C addresses (HYB 3165165T(L))
Plastic Package:
P-TSOPII-54-1 500 mil
HYB 3164(5)165T(L)
Semiconductor Group
31