鈥?/div>
7.2 mW standby (TTL)
3.24 mW standby (MOS)
720
碌W
standby for L-version
Read, write, read-modify-write, CAS-before-RAS refresh (CBR),
RAS-only refresh, hidden refresh and self refresh (L-version only)
2 CAS / 1 WE byte control
8192 refresh cycles /128 ms , 13 R/ 9C addresses (HYB 3164160AT)
4096 refresh cycles / 64 ms , 12 R/ 10C addresses (HYB 3165160AT)
2048 refresh cycles / 32 ms , 11 R/ 11C addresses (HYB 3166160AT)
256 msec refresh period for L-versions
Plastic Package:
P-TSOPII-50 400 mil
Semiconductor Group
1
6.97