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HYB314100BJ-50 Datasheet

  • HYB314100BJ-50

  • 4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM

  • 1155.09KB

  • 23頁

  • INFINEON   INFINEON

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4M x 1-Bit Dynamic RAM
Low Power 4M x 1-Bit Dynamic RAM
HYB 314100BJ/BJL -50/-60/-70
Advanced Information
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4 194 304 words by 1-bit organization
0 to 70 藲C operating temperature
Fast Page Mode Operation
Performance:
-50
-60
60
15
30
110
40
-70
70
20
35
130
45
ns
ns
ns
ns
ns
t
RAC
t
CAC
t
AA
t
RC
t
PC
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RAS access time
CAS access time
Access time from address
Read/Write cycle time
Fast page mode cycle time
50
13
25
95
35
Single + 3.3 V (鹵 0.3 V ) supply with a built-in
V
bb
generator
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Low power dissipation
max. 252 mW active (-50 version)
max. 216 mW active (-60 version)
max. 198 mW active (-70 version)
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Standby power dissipation:
7.2 mW max. standby (TTL)
3.6 mW max. standby (CMOS)
720
碌W
max. standby (CMOS) for Low Power Version
Output unlatched at cycle end allows two-dimensional chip selection
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Read, write, read-modify write, CAS-before-RAS refresh, RAS-only refresh,
hidden refresh and test mode capability
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All inputs and outputs TTL-compatible
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1024 refresh cycles / 16 ms
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1024 refresh cycles / 128 ms Low Power Version
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Plastic Packages: P-SOJ-26/20-5 with 300 mil width
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Semiconductor Group
1
4.96

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