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HYB3116400BJ-50 Datasheet

  • HYB3116400BJ-50

  • 3.3V 4M x 4-Bit Dynamic RAM

  • 254.66KB

  • 26頁

  • INFINEON   INFINEON

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3.3V 4M x 4-Bit Dynamic RAM
HYB3116400BJ/BT(L) -50/-60/-70
HYB3117400BJ/BT(L) -50/-60/-70
Advanced Information
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4 194 304 words by 4-bit organization
0 to 70 擄C operating temperature
Performance:
-50
t
RAC
t
CAC
t
AA
t
RC
t
PC
RAS access time
CAS access time
Access time from address
Read/Write cycle time
Fast page mode cycle time
50
13
25
90
35
-60
60
15
30
110
40
-70
70
20
35
130
45
ns
ns
ns
ns
ns
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Single + 3.3 V (鹵 0.3V ) supply
Low power dissipation
max. 396 active mW (HYB3117400BJ/BT-50)
max. 363 active mW (HYB3117400BJ/BT-60)
max. 330 active mW (HYB3117400BJ/BT-70)
max. 360 active mW (HYB3116400BJ/BT-50)
max. 324 active mW (HYB3116400BJ/BT-60)
max. 288 active mW (HYB3116400BJ/BT-70)
7.2 mW standby (LV-TTL)
3.6 mW standby (LV-CMOS)
720
碌W
standby for L-version
Output unlatched at cycle end allows two-dimensional chip selection
Read, write, read-modify-write, CAS-before-RAS refresh, RAS-only refresh, hidden refresh,
Self Refresh and test mode
Fast page mode capability
All inputs, outputs and clocks fully TTL-compatible
2048 refresh cycles / 32 ms for HYB3117400
4096 refresh cycles / 64 ms for HYB3116400
Plastic Package:
P-SOJ-26/24-1 (300 mil)
P-TSOPII-26/24-1 (300mil)
Semiconductor Group
1
1.96

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