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HY638100J-20 Datasheet

  • HY638100J-20

  • x8 SRAM

  • 8頁

  • ETC

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HY638100 Series
128Kx8bit CMOS FAST SRAM
DESCRIPTION
The HY638100 is a high-speed 131,072 x 8-bits CMOS static RAM fabricated using Hyundai's high
performance CMOS process technology. This high reliability process coupled with high-speed circuit design
techniques, yields maximum access time of 15ns. The HY638100 has a data retention mode that
guarantees data to remain valid at a minimum power supply voltage of 2.0 volt. It is suitable for use in high-
density high-speed system applications.
FEATURES
鈥?/div>
Single 5V鹵10% Power Supply
鈥?/div>
High speed - 15/20/25ns(max.)
鈥?/div>
Low power consumption(Max.)
Mode
Conditions Current Units
Operating 15ns
150
mA
20/25ns
140
mA
Standby
TTL
40
mA
CMOS
2
mA
L
500
uA
鈥?/div>
Battery backup(L-part)
- 2.0V(min.) data retention
鈥?/div>
Fully static operation and Tri-state outputs
- No clock or refresh required
鈥?/div>
TTL compatible inputs and outputs
鈥?/div>
Standard pin configuration
- 32pin 400mil SOJ
- 32pin 400mil TSOP-II
BLOCK DIAGRM
A0
ADD INPUT BUFFER
COLUMN DECODER
SENSE AMP
ROW DECODER
I/O1
OUTPUT BUFFER
I/O8
A16
/CS
/OE
/WE
PIN CONNECTION
A0
A1
A2
A3
/CS
I/O1
I/O2
Vcc
Vss
I/O3
I/O4
/WE
A4
A5
A6
A7
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
A16
A15
A14
A13
/OE
I/O8
I/O7
Vss
Vcc
I/O6
I/O5
A12
A11
A10
A9
A8
PIN DESCRIPTION
Pin Name
/CS
/WE
/OE
A0~A16
I/O1~I/O8
Vcc
Vss
Pin Function
Chip Select
Write Enable
Output Enable
Adderss Input
Data Input/Output
Power(+5.0V)
Ground
SOJ/TSOP-II
ORDERING INFORMATION
Part No.
HY638100J
HY638100LJ
HY638100T2
HY638100LT2
Speed
15/20/25
15/20/25
15/20/25
15/20/25
Power
L-part
L-part
Package
SOJ
SOJ
TSOP-II
TSOP-II
This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume any
responsibility for use of circuits described. No patent licenses are implied.
Rev.02 / Dec.97
Hyundai Semiconductor
CONTROL
LOGIC
WRITE DRIVER
MEMORY ARRAY
512x2048

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