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HY62256BT1-70 Datasheet

  • HY62256BT1-70

  • x8 SRAM

  • 146.65KB

  • 9頁(yè)

  • ETC

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HY62256B Series
32Kx8bit CMOS SRAM
DESCRIPTION
The HY62256B is a high-speed, low power and
32,786 X 8-bits CMOS Static Random Access
Memory fabricated using
Hyundai's high
performance CMOS process technology. It is
suitable for use in low voltage operation and
battery back-up application. This device has a
data retention mode that guarantees data to
remain valid at the minimum power supply
voltage of 2.0 volt.
FEATURES
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Fully static operation and Tri-state output
TTL compatible inputs and outputs
Low power consumption
Battery backup(L/LL-part)
- 2.0V(min.) data retention
鈥?/div>
Standard pin configuration
- 28 pin 600 mil PDIP
- 28 pin 330mil SOP
- 28 pin 8x13.4 mm TSOP-I
(Standard and Reversed)
Standby Current(uA)
L
LL
1mA
100
25
Temperature
(擄C)
0~70(Normal)
Product
Voltage
Speed
No.
(V)
(ns)
HY62256B
5.0
55/70/85
Note 1. Current value is max.
Operation
Current(mA)
8
PIN CONNECTION
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O1
I/O2
I/O3
Vss
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
Vcc
/WE
A13
A8
A9
A11
/OE
A10
/CS
I/O8
I/O7
I/O6
I/O5
I/O4
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O1
I/O2
I/O3
Vss
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
Vcc
/WE
A13
A8
A9
A11
/OE
A10
/CS
I/O8
I/O7
I/O6
I/O5
I/O4
/OE
A11
A9
A8
A13
/WE
Vcc
A14
A12
A7
A6
A5
A4
A3
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
A10
/CS
I/O8
I/O7
I/O6
I/O5
I/O4
Vss
I/O3
I/O2
I/O1
A0
A1
A2
A3
A4
A5
A6
A7
A12
A14
Vcc
/WE
A13
A8
A9
A11
/OE
14
13
12
11
10
9
8
7
6
5
4
3
2
1
15
16
17
18
19
20
21
22
23
24
25
26
27
28
A2
A1
A0
I/O1
I/O2
I/O3
Vss
I/O4
I/O5
I/O6
I/O7
I/O8
/CS
A10
PDIP
SOP
TSOP-I(Standard)
TSOP-I(Reversed)
PIN DESCRIPTION
Pin Name
/CS
/WE
/OE
A0 ~ A14
I/O1 ~ I/O8
Vcc
Vss
Pin Function
Chip Select
Write Enable
Output Enable
Address Inputs
Data Input/Output
Power(+5.0V)
Ground
A0
BLOCK DIAGRAM
SENSE AMP
ROW DECODER
ADD INPUT BUFFER
I/O1
OUTPUT BUFFER
I/O8
COLUMN DECODER
A14
/CS
/OE
/WE
This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume any
responsibility for use of circuits described. No patent licenses are implied.
Rev.04 /Jan.99
Hyundai Semiconductor
CONTROL
LOGIC
WRITE DRIVER
MEMORY ARRAY
512x512

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