HY62256A
Series
32Kx8bit CMOS SRAM
DESCRIPTION
The HY62256A is a high-speed, low power and
32,786 x 8-bits CMOS Static Random Access
Memory fabricated using
Hyundai's high
performance CMOS process technology. The
HY62256A has a data retention mode that
guarantees data to remain valid at the minimum
power supply voltage of 2.0 volt. Using the CMOS
technology, supply voltages from 2.0 to 5.5volt
has little effect on supply current in the data
retention mode. The HY62256A is suitable for use
in low voltage operation and battery back-up
application.
Product
Voltage
Speed
No.
(V)
(ns)
HY62256A
5.0
55/70/85
Note 1. Current value is max.
Operation
Current(mA)
50
FEATURES
Fully static operation and Tri-state output
TTL compatible inputs and outputs
Low power consumption
Battery backup(L/LL-part)
- 2.0V(min.) data retention
鈥?/div>
Standard pin configuration
- 28 pin 600 mil PDIP
- 28 pin 330mil SOP
- 28 pin 8x13.4 mm TSOP-I
(Standard and Reversed)
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Standby Current(uA)
L
LL
1mA
100
25
Temperature
(擄C)
0~70(Normal)
PIN CONNECTION
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O1
I/O2
I/O3
Vss
Vcc
/WE
A13
A8
A9
A11
/OE
A10
/CS
I/O8
I/O7
I/O6
I/O5
I/O4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O1
I/O2
I/O3
Vss
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
Vcc
/WE
A13
A8
A9
A11
/OE
A10
/CS
I/O8
I/O7
I/O6
I/O5
I/O4
/OE
A11
A9
A8
A13
/WE
Vcc
A14
A12
A7
A6
A5
A4
A3
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
A10
/CS
I/O8
I/O7
I/O6
I/O5
I/O4
Vss
I/O3
I/O2
I/O1
A0
A1
A2
A3
A4
A5
A6
A7
A12
A14
Vcc
/WE
A13
A8
A9
A11
/OE
14
13
12
11
10
9
8
7
6
5
4
3
2
1
15
16
17
18
19
20
21
22
23
24
25
26
27
28
A2
A1
A0
I/O1
I/O2
I/O3
Vss
I/O4
I/O5
I/O6
I/O7
I/O8
/CS
A10
PDIP
SOP
TSOP-I(Standard)
TSOP-I(Reversed)
PIN DESCRIPTION
Pin Name
/CS
/WE
/OE
A0 ~ A14
I/O1 ~ I/O8
Vcc
Vss
Pin Function
Chip Select
Write Enable
Output Enable
Address Inputs
Data Input/Output
Power(+5.0V)
Ground
A0
BLOCK DIAGRAM
SENSE AMP
ROW DECODER
ADD INPUT BUFFER
I/O1
OUTPUT BUFFER
I/O8
COLUMN DECODER
A14
/CS
/OE
/WE
This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume any
responsibility for use of circuits described. No patent licenses are implied.
Rev.02 /Jun.99
Hyundai Semiconductor
CONTROL
LOGIC
WRITE DRIVER
MEMORY ARRAY
512x512
next
HY62256ALP-85相關(guān)型號(hào)PDF文件下載
-
型號(hào)
版本
描述
廠商
下載
-
英文版
8KX8-Bit CMOS SRAM
HYNIX
-
英文版
8KX8-Bit CMOS SRAM
HYNIX [Hyn...
-
英文版
8KX8-Bit CMOS SRAM
HYNIX
-
英文版
8KX8-Bit CMOS SRAM
HYNIX [Hyn...
-
英文版
ETC
-
英文版
32Kx8bit CMOS SRAM
HYNIX
-
英文版
32Kx8bit CMOS SRAM
HYNIX [Hyn...
-
英文版
IC,SRAM,512KX8,CMOS,DIP,32PIN,PLASTIC
Hynix
-
英文版
32K x 8-BIT CMOS SRAM
HYNIX
-
英文版
32K x 8-BIT CMOS SRAM
HYNIX [Hyn...
-
英文版
32Kx8bit CMOS SRAM
HYNIX
-
英文版
32Kx8bit CMOS SRAM
HYNIX [Hyn...
-
英文版
32Kx8bit CMOS SRAM
HYNIX
-
英文版
32Kx8bit CMOS SRAM
HYNIX [Hyn...
-
英文版
8KX8-Bit CMOS SRAM
HYNIX
-
英文版
8KX8-Bit CMOS SRAM
HYNIX [Hyn...
-
英文版
8KX8-Bit CMOS SRAM
HYNIX
-
英文版
8KX8-Bit CMOS SRAM
HYNIX [Hyn...
-
英文版
8KX8-Bit CMOS SRAM
HYNIX
-
英文版
8KX8-Bit CMOS SRAM
HYNIX [Hyn...